Miniature liquid junction reference electrode and an integrated solid state electrochemical sensor including the same

• US 4,592,824 A
• Filed: 09/13/1985
• Issued: 06/03/1986
• Est. Priority Date: 09/13/1985
• Status: Expired due to Term

• Current Assignee: Centre Suisse D' Electronique et de Microtechnique SA Maladiere
• Original Assignee: CSEM Centre Suisse D'Electronique et de Microtechnique SA
• Inventors: Collins, Scott, Smith, Rosemary L.
• Primary Examiner(s): Kaplan, G. L.
• Application Number:
  US06/775,769
• Time in Patent Office: 263 Days
• Field of Search: 204/435, 204/416, 204/417, 204/418, 204/419, 204/420, 204/403, 357/25, 128/635
• US Class Current: 257/253
• CPC Class Codes: G01N 27/301 Reference electrodes
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82

Abstract

This invention relates to a miniature reference electrode of the liquid junction-type which is utilized by an integrated electrochemical sensor, which functions as an Ion Sensitive Field Effect Transistor.

Claims

1. A miniature reference electrode providing both electrical connection and a liquid junction between a reference liquid solution and a solution to be tested, comprising:

a substrate provided with a cavity to hold said reference liquid solution;

a membrane comprising porous silicon closing a first end of said cavity;

means for applying fixed control voltage to said reference liquid solution; and

means for hermetically closing a second end of said cavity.

2. A miniature reference electrode according to claim 1, wherein said substrate comprises insulating material.

3. A miniature reference electrode according to claim 1, wherein said substrate comprises silicon.

4. A miniature reference electrode according to claim 1, wherein said means for applying the fixed control voltage comprises an electrode disposed in said cavity.

5. A miniature reference electrode according to claim 1, wherein said means for hermetically closing said second end of the cavity comprises a glass cover which is sealed to said substrate.

6. A miniature reference electrode according to claim 5, wherein said means for applying the control voltage comprises an electrode formed on the surface of said glass cover.

7. An integrated chemical sensor including an Ion Sensitive Field Effect Transistor formed in a silicon substrate and a miniature reference electrode on said silicon substrate, wherein said electrode comprises:

a cavity provided in said silicon substrate to hold a reference liquid solutiion;

a membrane comprising porous silicon, said membrane closing a first end of said cavity;

means for applying a fixed control voltage to said reference liquid solution; and

means for hermetically closing a second end of said cavity.

8. An integrated sensor according to claim 7, wherein said porous silicon membrane is formed on the same side of said silicon substrate as the Ion Sensitive Field Effect Transistor.