Method and apparatus for plasma etching

• US 4,595,452 A
• Filed: 03/11/1985
• Issued: 06/17/1986
• Est. Priority Date: 03/11/1985
• Status: Expired due to Fees

• Current Assignee: Oerlikon Buhrle USA Incorporated
• Original Assignee: Oerlikon-Buhrle USA, Inc. (OC Oerlikon Corporation AG)
• Inventors: Landau, Richard F., Majewski, Henry A.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/710,618
• Time in Patent Office: 463 Days
• Field of Search: 156/643, 156/644, 156/646, 156/653, 156/657, 156/659.1, 156/662, 156/345, 204/164, 204/192 EC, 204/192 E, 204/298, 427/38, 427/39, 118/728, 118/50.1, 118/620
• US Class Current: 438/713
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32541 Shape
• CPC Class Codes: H01L 21/76804 by forming tapered via holes

Abstract

The invention comprises a novel method and apparatus for plasma etching a semiconductor workpiece so as to produce chamfering at the outer edges of depressions or grooves in the workpiece, e.g., depressions or grooves in a substrate or one or more layers on the substrate. The novel apparatus comprises a first gas feeder means for delivering an etchant gas at a right angle to the workpiece, and a second gas feeder means for delivering an etchant gas at an acute angle to the workpiece.

Claims

1. A improved system for conducting plasma etching of semiconductor wafers comprising:

a process chamber;

first and second electrodes mounted in said chamber and arranged so at least one wafer may be disposed between them for etching;

means for evacuating said chamber;

gas supply means for introducing at least one reactive etching gas to said process chamber;

RF power supply means connected to said electrodes so as to ionize said at least one reactive etching gas and provide a plasma that will impinge upon and etch a wafer located between said electrodes

said first electrode being characterized by (1) a first gas feeder means comprising a plurality of first discharge openings arranged to discharge said at least one reactive etching gas in a plurality of gas streams extending in a direction that is substantially at a right angle to a the plane of a wafer supported on said second electrode, and (2) a second gas feeder means comprising a plurality of second discharge openings each arranged to discharge said at least one reactive etching gas in a direction that is at an acute angle to the plane of a wafer supported on said second electrode;

gas flow control means comprising (a) first means for selectively connecting said first gas feeder means to said gas supply means so that said at least one reactive etching gas will be dispersed via said first discharge openings in a plurality of streams flowing toward said second electrode at a right angle to said second electrode, and (b) second means for selectively connecting said second gas feeder means to said gas supply means so that said at least one etching gas will be dispersed via said second discharge openings in a plurality of streams flowing toward second electrode at an acute angle to said second electrode.

2. A system according to claim 1 wherein said second gas feeder means is arranged so that said at least one etching gas may be fed to different ones of said second openings in a predetermined sequence.

3. A system according to claim 1 wherein said second gas feeder means surrounds said first gas feeder means.

4. A system according to claim 1 wherein said second gas feeder means comprises a porous member that has continuous passageways therein to permit said at least one gas to pass therethrough.

5. A system according to claim 4 wherein said second gas feeder means is in the form of a shroud surrounding said first electrode.

6. A system according to claim 5 further including means electrically insulating a selected portion of said shroud so as to constrict said plasma to the region between said electrodes.

7. A system according to claim 4 wherein said first gas feeder means comprises a porous gas feeder plate attached to said first electrode.

8. A system according to claim 4 wherein said gas flow control means is adapted to cause gas to be introduced to said selected portions of said shroud sequentially according to their respective positions around the circumference of said first electrode.

9. A method of conducting etching of a semiconductor workpiece so as to produce depressions that have chamfered corners, comprising the steps of:

(a) providing a semiconductor workpiece that has a mask on one side thereof defining at least one etching aperture;

(b) placing said workpiece between first and second electrodes disposed in a process chamber so that said workpiece is proximate to said second electrode and said one side thereof faces said first electrode;

(c) coupling an RF power supply across said electrodes so as to create an RF electric field between said electrodes;

(d) selectively feeding a reactive etchant gas (1) through first gas feed means arranged to discharge said gas in a plurality of streams directed toward said second electrode perpendicularly to said one side of said workpiece; and

(e) selectively feeding a reactive etchant gas through a second gas feed means arranged to discharge said gas through second feed means arranged to discharge said gas in a plurality of streams directed toward said second electrode at an acute angle to said one side of said workpiece;

whereby the gas streams discharged from said first and second gas feed means are ionized and accelerated toward said second electrode so as to pass through said at least one etching aperture, with the gas streams from said first gas feed means passing through said at least one etching aperture substantially perpendicularly to said one side to cause formation of a depression in said workpiece having sharp outer corners, and the gas streams from said second gas feed means passing through said at least one etching aperture at an acute angle to said one side to cause chamfering of said outer corners.

10. A method according to claim 9 wherein said workpiece mask has a plurality of etching apertures and said first and second gas feed means each comprises a plurality of apertures for discharging gas.

11. A method according to claim 10 wherein said gas is fed to said second gas feed means after is has been fed to said first gas feed means.

12. A method according to claim 9 wherein said second gas feed means comprises a plurality of discharge openings arranged in an array that extends around the periphery of the workpiece.

13. A method according to claim 12 wherein gas is delivered to said first and second gas feed means in a predetermined sequence for short periods of time.

14. A method according to claim 13 wherein gas is delivered to said first and second gas feed means simultaneously.

15. A improved system for conducting plasma etching of semiconductor wafers comprising:

a process chamber;

first and second electrodes mounted in said chamber and arranged so at least one wafer may be disposed between them for processing;

means for evacuating said chamber;

gas supply means for introducing at least one reactive etching gas to said process chamber;

RF power supply means connected to said electrodes so as to ionize said at least one reactive etching gas and provide a plasma that will impinge upon and etch a wafer located between said electrodes

said first electrode being characterized by a first gas feeder means for directing a reactive etching gas toward said second electrode at a first angle to said second electrode, and a second gas feeder means for directing a reactive etching gas toward said second electrode at a second angle to said second electrode; and

means for selectively connecting said first and second gas feeder means to said gas supply means so that a reactive etching gas may be directed at said second electrode by said first and/or said second gas feeder means.