Depletion mode thin film semiconductor photodetectors

• US 4,598,305 A
• Filed: 06/18/1984
• Issued: 07/01/1986
• Est. Priority Date: 06/18/1984
• Status: Expired due to Fees

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Johnson, Noble M., Chiang, Anne
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US06/621,340
• Time in Patent Office: 743 Days
• Field of Search: 357/23.7, 357/4, 357/23.14, 357/24 LR, 357/30, 357/24
• US Class Current: 257/66
• CPC Class Codes: H01L 31/1136 the device being a metal-insulator-semiconductor field-effect transistor

Abstract

A depletion mode thin film semiconductor photodetector comprises a crystalline silicon thin film on an insulating substrate with a source region, a drain region and a thin film light sensing channel region formed therebetween. A gate oxide formed over the channel region and a gate electrode formed on the gate oxide. A p-n junction located parallel to the surface of the substrate and within the thin film functioning as a space charge separation region in the channel. The lower portion of the channel region is a p region extending to the substrate and the upper portion of the channel region is a n region extending to the gate oxide. The channel region functions as a fully depleted channel when the photodetector is operated in its OFF state providing for high dynamic range and large photocurrent operation. The depletion mode thin film semiconductor photodetector with n⁺ source and drain regions function as an ohmic contacts to the channel n region forming a thin film transistor. The thin film transistor photodetector has high photoconductive gain at low light intensities when the n channel region is fully pinched off by an applied gate voltage to the gate electrode which is sufficiently negative as compared to the threshold voltage of the photodetector. When the drain region is replaced by a p⁺ region functioning as an ohmic contact to the channel p region, a depletion mode gated diode is formed. When the channel region is extended to include a plurality of linearly spaced gate electrodes formed on the gate oxide region with an input diode formed adjacent to the first of such gate electrodes and an output diode formed adjacent to the last of such gate electrodes, the photodetector functions as a charge coupled device.

Claims

1. A depletion mode thin film semiconductor photodetector comprising a crystalline silicon thin film on an insulating substrate with a source region, a drain region and a thin film light sensing channel region formed therebetween, a gate oxide formed over said channel region, a gate electrode formed on said gate oxide, a p-n junction located parallel to the surface of said substrate and within said thin film and creating a space charge separation region therein, the lower portion of said channel region being a first conductivity type region extending to said substrate and the upper portion of said channel region being a second conductivity type region extending to said gate oxide, said source and drain regions functioning as ohmic contacts with said upper portion channel region, said upper portion channel region forming a channel for majority carrier conduction, said lower portion channel region being maintained at floating potential for minority carrier collection as space charge therein, said channel region functioning as a fully depleted channel when said photodetector is operated in its OFF state providing for high dynamic range and large photocurrent operation.

2. The depletion mode thin film photodetector of claim 1 wherein said photodetector comprises n⁺ source and drain regions functioning as ohmic contacts to said channel n region forming a thin film transistor, said photodetector having high photoconductive gain at low light intensities when said n channel region is fully pinched off by an applied gate voltage to said gate electrode sufficiently negative as compared to the threshold voltage of said photodetector.

3. The depletion mode thin film semiconductor photodetector of claim 1 wherein said lower portion channel region is doped n type and said upper portion channel region is doped p type.

4. The depletion mode thin film semiconductor photodetector of claim 3 wherein said photodetector comprises p⁺ source and drain regions functioning as ohmic contacts to said channel p region forming a thin film transistor, said photodetector having high photoconductive gain at low light intensities when said p channel region is fully pinched off by an applied gate voltage to said gate electrode sufficiently positive as compared to the threshold voltage of said photodetector.

5. The depletion mode thin film semiconductor photodetector of claim 1 wherein said gate region is semi-transparent.

6. The depletion mode thin film semiconductor photodetector of claim 1 wherein said insulating substrate is transparent.

7. The depletion mode thin film semiconductor photodetector of claim 1 wherein the acceptor and donor concentrations and profiles are chosen to permit photoconduction in said channel region with said channel region fully depleted in the dark.

8. The depletion mode thin film semiconductor photodetector of claim 7 wherein the acceptor and donor concentrations respectively in said channel p region and said channel n region are in the range from 10¹⁶ /cm³ to 10¹⁸ /cm³.

9. The depletion mode thin film semiconductor photodetector of claim 1 wherein the thickness of said channel region is in the range of 0.3 μ

m to 50 μ

m.

10. The depletion mode thin film semiconductor photodetector of claim 1 formed by laser melting treatment to bring about recrystallization of said thin film.

11. The depletion mode thin film semiconductor photodetector of claim 1 wherein said channel region is extended to include a plurality of linearly spaced gate electrodes formed on said gate oxide forming a plurality of spaced photodetectors, an input diode formed over said source region and adjacent to the first of said gate electrodes, an output diode formed over said drain region adjacent to the last of said gate electrodes, said photodetectors functioning as a charge coupled device.

12. The charge coupled device of claim 11 wherein said gate region is semi-transparent.

13. The charge coupled device of claim 11 wherein said insulating substrate is transparent.

14. The charge coupled device of claim 11 wherein the acceptor and donor concentrations and profiles are chosen to permit photoconduction in said channel region with said channel region fully depleted in the dark.

15. The charge coupled device of claim 14 wherein the acceptor and donor concentrations respectively in said channel p region and said channel n region are in the range from 10¹⁶ /cm³ to 10¹⁸ /cm³.

16. The charge coupled device of claim 11 wherein the thickness of said channel region is in the range of 0.3 μ

m to 50 μ

m.

17. The charge coupled device of claim 11 formed by laser melting treatment to bring about recrystallization of said thin film.

18. The charge coupled device of claim 11 wherein said lower portion channel region is doped n type and said upper portion channel region is doped p type.

19. The charge coupled device of claim 17 wherein said source and drain regions comprise p⁺ regions functioning as an ohmic contacts to said channel n region.

30. The depletion mode thin film semiconductor photodetector of claim 1 wherein said lower portion channel region is doped p type and said upper portion channel region is doped n type.

20. A depletion mode thin film semiconductor photodetector comprising a crystalline silicon thin film on an insulating substrate with a pair of terminal regions and a thin film light sensing channel region formed therebetween, a gate oxide formed over said channel region, a gate electrode formed on said gate oxide, a p-n junction located parallel to the surface of said substrate and within said thin film and functioning as a space charge separation region therein, the lower portion of said channel region being a p region extending to said substrate and the upper portion of said channel region being an n region extending to said gate oxide, one of said terminal regions functioning as an ohmic contact to said channel n region and the other of said terminal regions functioning as an ohmic contact to said channel p region, said channel region functioning as a fully depleted channel when said photodetector is operated in its OFF state providing for high dynamic range and large photocurrent operation, said photodetector forming a depletion mode gated diode.

21. The depletion mode thin film semiconductor photodetector of claim 20 wherein said one terminal region is a n⁺ region and the other terminal region is a p⁺ region.

22. The depletion mode thin film semiconductor photodetector of claim 20 wherein said lower portion channel region is doped n type and said upper portion channel region is doped p type.

23. The depletion mode thin film semiconductor photodetector of claim 22 wherein said photodetector comprises p⁺ terminal regions functioning as an ohmic contacts to said channel p region forming a thin film transistor, said photodetector having high photoconductive gain at low light intensities when said p channel region is fully pinched off by an applied gate voltage to said gate electrode sufficiently positive as compared to the threshold voltage of said photodetector.

24. The depletion mode thin film semiconductor photodetector of claim 20 wherein said gate region is semi-transparent.

25. The depletion mode thin film semiconductor photodetector of claim 20 wherein said insulating substrate is transparent.

26. The depletion mode thin film semiconductor photodetector of claim 20 wherein the acceptor and donor concentrations and profiles are chosen to permit photoconduction in said channel region with said channel region fully depleted in the dark.

27. The depletion mode thin film semiconductor photodetector of claim 26 wherein the acceptor and donor concentrations respectively in said channel p region and said channel n region are in the range from 10¹⁶ /cm³ to 10¹⁸ /cm³.

28. The depletion mode thin film semiconductor photodetector of claim 20 wherein the thickness of said channel region is in the range of 0.3 μ

m to 50 μ

m.

29. The depletion mode thin film semiconductor photodetector of claim 20 formed by laser melting treatment to bring about recrystallization of said thin film.