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Barrier layer for photovoltaic devices

  • US 4,598,306 A
  • Filed: 07/28/1983
  • Issued: 07/01/1986
  • Est. Priority Date: 07/28/1983
  • Status: Expired due to Term
First Claim
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1. In a semiconductor device comprising a first electrode;

  • an active semiconductor body atop the first electrode, said semiconductor body including at least one triad of semiconductor layers, said triad comprised of two oppositely doped semiconductor layers having a layer of intrinsic semiconductor material disposed therebetween, said body adapted to provide for the flow of electrical current in response to the absorption of light energy incident thereon, a second electrode atop the semiconductor body; and

    at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes;

    the improvement comprising;

    a continuous transparent barrier layer, formed of a material having an electrical resistivity greater than that of the electrodes, operatively disposed between the semiconductor body and one of the electrodes for decreasing the flow of electrical current through said at least one defect region of said semiconductor device.

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