Barrier layer for photovoltaic devices
First Claim
1. In a semiconductor device comprising a first electrode;
- an active semiconductor body atop the first electrode, said semiconductor body including at least one triad of semiconductor layers, said triad comprised of two oppositely doped semiconductor layers having a layer of intrinsic semiconductor material disposed therebetween, said body adapted to provide for the flow of electrical current in response to the absorption of light energy incident thereon, a second electrode atop the semiconductor body; and
at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes;
the improvement comprising;
a continuous transparent barrier layer, formed of a material having an electrical resistivity greater than that of the electrodes, operatively disposed between the semiconductor body and one of the electrodes for decreasing the flow of electrical current through said at least one defect region of said semiconductor device.
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Accused Products
Abstract
An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a material chosen from the group consisting essentially of oxides, nitride and carbides of: indium, tin, cadmium, zinc, antimony, silicon, chromium and mixtures thereof. Methods of (1) fabricating improved semiconductor devices and (2) preventing operational mode failures due to latent detents are also disclosed.
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Citations
20 Claims
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1. In a semiconductor device comprising a first electrode;
- an active semiconductor body atop the first electrode, said semiconductor body including at least one triad of semiconductor layers, said triad comprised of two oppositely doped semiconductor layers having a layer of intrinsic semiconductor material disposed therebetween, said body adapted to provide for the flow of electrical current in response to the absorption of light energy incident thereon, a second electrode atop the semiconductor body; and
at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes;
the improvement comprising;a continuous transparent barrier layer, formed of a material having an electrical resistivity greater than that of the electrodes, operatively disposed between the semiconductor body and one of the electrodes for decreasing the flow of electrical current through said at least one defect region of said semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
- an active semiconductor body atop the first electrode, said semiconductor body including at least one triad of semiconductor layers, said triad comprised of two oppositely doped semiconductor layers having a layer of intrinsic semiconductor material disposed therebetween, said body adapted to provide for the flow of electrical current in response to the absorption of light energy incident thereon, a second electrode atop the semiconductor body; and
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14. In a photovoltaic device comprising a substrate electrode;
- an active semiconductor body atop the substrate electrode;
a transparent, electrically conductive electrode atop the semiconductor body; and
at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes;
said semiconductor body including at least one triad of semiconductor layers, said triad comprised of two oppositely doped semiconductor layers having a layer of intrinsic semiconductor material disposed therebetween and adapted to generate electrical current in response to the absorption of light incident thereon;
the improvement comprising;a continuous transparent barrier layer, formed of a material having an electrical resistivity greater than that of the electrodes, operatively disposed between the semiconductor body and the transparent electrode for decreasing the flow of electrical current through said at least one defect region of said photovoltaic device. - View Dependent Claims (15, 16, 17, 18, 19, 20)
- an active semiconductor body atop the substrate electrode;
Specification