Use of plasma polymerized organosilicon films in fabrication of lift-off masks

• US 4,599,243 A
• Filed: 11/05/1984
• Issued: 07/08/1986
• Est. Priority Date: 12/23/1982
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Sachdev, Krishna G., Sachdev, Harbans S.
• Primary Examiner(s): Beck, Shrive P.
• Assistant Examiner(s): Jaconetty, K.
• Application Number:
  US06/668,361
• Time in Patent Office: 610 Days
• Field of Search: 427/40, 427/41, 427/88, 427/96, 427/259, 427/38, 430/314, 156/643, 204/192 E
• US Class Current: 216/18
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: Y10S 438/951 Lift-off

Abstract

Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

Claims

1. A lift-off method for forming a pattern on a substrate, comprising:

A. blanket depositing a first film of a solvent soluble organic polymer on said substrate;

B. plasma polymerizing on said first film a second oxygen barrier film of an organosilicon polymer from an ambient containing monomers selected from the group consisting of organosilicones, organosilanes, organosilazanes, organosiloxanes and mixtures thereof said organosilicon polymer having the characteristic that it does not contain a preponderance of Si--O bonds relative to the number of Si--CH₃ bonds;

C. forming a pattern of selected openings through said barrier film to expose corresponding portions of said first film; and

D. reactive ion etching said exposed portions of said first film in an oxygen containing ambient to form openings therein and extending therethrough to expose corresponding portions of said substrate.

2. The method of claim 1 wherein said substrate comprises a ceramic.

3. The method of claim 1 wherein said substrate comprises a glass ceramic.

4. The method of claim 1 including depositing a blanket coating of a conductive metal film on said substrate inclusive of said openings onto said exposed portions of said substrate;

and subjecting the composite structure to said solvent to solvate said polymeric first film and concurrently lifting-off all superimposed films thereon so as to retain said metal film on said exposed portions of said substrate.

5. The method of claim 4 wherein said plasma polymerizing ambient includes organoboron monomers whereby said formed film comprises an organoborosilicone polymer barrier film, and said reactive ion etching comprises an oxygen plasma treatment which forms a borosilicate surface layer on said barrier film.

6. The method of claim 5 wherein said organoboron monomers comprise trimethoxy boroxine.

7. The method of claim 1 wherein said plasma polymerizing ambient includes organoboron monomers whereby said formed first polymer film comprises an organoborosilicone polymer barrier film.

8. The method of claim 7 wherein said organoboron monomer comprises trimethoxy boroxine.

9. The method of claim 1 wherein said substrate is an oxidized monocrystalline semiconductor substrate having at least one via opening in the oxide film in register with a corresponding one of said openings to expose a surface adjacent portion of said silicon substrate, with said substrate having at least one integrated circuit formed thereon, and said metal film is in contact with the exposed portion of said substrate.

10. The method of claim 9 including depositing a blanket coating of a conductive metal film on said substrate inclusive of said openings onto said exposed portions of said substrate;

and subjecting the composite structure to said solvent to solvate said polymeric first film and concurrently lifting-off all superimposed films thereon so as to retain said metal films on said exposed portions of said substrate.

11. The method of claim 1 wherein said monomers are represented by the formulas:

##STR6## where X is zero or oxygen, NH, NR₁, CH₂, ##STR7## R is CH₃, --CH═

CH₂, --OCH₃, --OC₂ H₅, --O--Si--R₁, or --O--Si--CH═

CH₂ ; and

R₁ is an alkyl group.

12. The method of claim 11 wherein said substrate is an oxidized monocrystalline semiconductor substrate having at least one via opening in the oxide film in register with a corresponding one of said openings to expose a surface adjacent portion of said silicon substrate, with said substrate having at least one integrated circuit formed therein, and said metal film is in contact with the exposed portion of said substrate.

13. The method of claim 12 including depositing a blanket coating of a conductive metal film on said substrate inclusive of said openings onto said exposed portions of said substrate;

and subjecting the composite structure to said solvent to solvate said polymeric first films and concurrently lifting-off all superimposed films thereon so as to retain said metal films on said exposed portions of said substrate.

14. The method of claim 11 including depositing a blanket coating on a conductive metal film on said substrate inclusive of said openings onto said exposed portions of said substrate;

and subjecting the composite structure to said solvent to solvate said polymeric first film and concurrently lifting-off all superimposed films thereon so as to retain said metal films on said exposed portions of said substrate.

15. The method of claim 14 wherein said plasma polymerizing ambient includes organoboron monomers whereby said formed second polymer film comprises an organoborosilicone polymer barrier film, and said reactive ion etching comprises an oxygen plasma treatment which forms a borosilicate surface layer on said barrier film.

16. The method of claim 15 wherein said organoboron monomer comprises triethoxy or trimethoxy boroxine.

17. The method of claim 1 wherein said monomers are represented by the formula:

##STR8## where Y is R, or OR;

X is --CH═

CH₂, --C.tbd.CH, OR, phenyl or aminoalkene group; and

R is an alkyl.

18. The method of claim 17 including depositing a blanket coating of a conductive metal film on said substrate inclusive of said openings onto said exposed portions of said substrate;

and subjecting the composite structure to said solvent to solvate said polymeric first films and concurrently lifting-off all superimposed films thereon so as to retain said metal films on said exposed portions of said substrate.

19. The method of claim 17 wherein said substrate is an oxidized monocrystalline semiconductor substrate having at least one via opening in the oxide film in register with a corresponding one of said openings to expose a surface adjacent portion of said silicon substrate, with said substrate having at least one integrated circuit formed therein, and said metal film is in contact with the exposed portion of said substrate.

20. The method of claim 19 including depositing a blanket coating of a conductive metal film on said substrate inclusive of said openings onto said exposed portions of said substrate;

and subjecting the composite structure to said solvent to solvate said polymeric first films and concurrently lifting-off all superimposed films thereon so as to retain said metal films on said exposed portions of said substrate.

21. The method of claim 1 wherein said plasma polymerized film is annealed at a temperature of between about 250°

C. to about 400°

C., as the next step following deposition and prior to said formation of patterned openings.

22. The method of claim 21 including depositing a blanket coating of a conductive metal film on said substrate inclusive of said openings onto said exposed portions of said substrate;

and subjecting the composite structure to said solvent to solvate said polymeric first films and concurrently lifting-off all superimposed films thereon so as to retain said metal films on said exposed portions of said substrate.

23. The method of claim 21 wherein said substrate is an oxidized monocrystalline semiconductor substrate having at least one via opening in the oxide film in register with a corresponding one of said openings to expose a surface adjacent portion of said silicon substrate, with said substrate having at least one integrated circuit formed therein, and said metal film is in contact with the exposed portion of said substrate.

24. The method of claim 23 including depositing a blanket coating of a conductive metal film on said substrate inclusive of said openings onto said exposed portions of said substrate;

and subjecting the composite structure to said solvent to solvate said polymeric first films and concurrently lifting-off all superimposed films thereon so as to retain said metal films on said exposed portions of said substrate.

25. The method of claim 21 wherein said opening patterned plasma polymerized film is treated in an oxygen plasma.

26. The method of claim 25 including depositing a blanket coating of a conductive metal film on said substrate inclusive of said openings onto said exposed portions of said substrate;

and subjecting the composite structure to said solvent to solvate said polymeric first films and concurrently lifting-off all superimposed films thereon so as to retain said metal films on said exposed portions of said substrate.

27. The method of claim 25 wherein said plasma polymerizing ambient includes organoboron monomers whereby said formed second polymer film comprises an organoborosilicon polymer barrier film, and said oxygen plasma treatment forms a borosilicate surface layer on said barrier film.

28. The method of claim 27 wherein said organoboron monomer comprises triethoxy boroxine or trimethoxy boroxine.

29. The method of claim 17 wherein R comprises CH₃ or C₂ H₅.