Anti-reflection coating for optical component and method for forming the same
First Claim
1. An optical component comprising a substrate for said optical component and an anti-reflection coating, formed on said substrate by subjecting a mixture of 10 to 30% of SiO2 and an evaporating material having an anti-reflection effect to vacuum evaporation at room temperature.
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Accused Products
Abstract
An anti-reflection coating for an optical component and a method of forming the same are disclosed. The anti-reflection coating is formed on a substrate for an optical component by subjecting a mixture of an evaporating material and 10-30% of SiO2 to vacuum evaporation at room temperature without heating the substrate. When the anti-reflection coating is a single layer, a mixture of MgF2 and 10-30% of SiO2 is used as the evaporating material. When the anit-reflection coating is a multi-layer structure, a mixture of a fluoride or a silicon oxide and 10-30% of SiO2 for a first layer, and a mixture of a fluoride or an oxide and 10-30% of SiO2 for middle and last layers are used as the evaporating material.
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14 Claims
- 1. An optical component comprising a substrate for said optical component and an anti-reflection coating, formed on said substrate by subjecting a mixture of 10 to 30% of SiO2 and an evaporating material having an anti-reflection effect to vacuum evaporation at room temperature.
- 2. An optical component, comprising a substrate for said optical component and an anti-reflection coating which is formed on said substrate by successively subjecting a mixture of an evaporating material having an anti-reflection effect and 10 to 30% of SiO2 as a first layer, and a mixture of a fluoride or an oxide and 10 to 30% SiO2 as middle and last layers to vacuum evaporation at room temperature.
- 7. A method of forming an anti-reflection coating on a substrate for an optical component, which comprises mixing 10-30% of SiO2 with an evaporating material having an anti-reflection effect, subjecting said substrate to sputtering irradiation with an ion beam of Ar and/or O2, and at the same time subjecting the mixture of SiO2 and evaporating material to vacuum evaporation at room temperature by electron beam heating without heating said substrate to thereby deposit at least one layer of said mixture on said substrate.
Specification