Method of producing a thin silicon-on-insulator layer

• US 4,601,779 A
• Filed: 06/24/1985
• Issued: 07/22/1986
• Est. Priority Date: 06/24/1985
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Nesbit, Larry A., Lasky, Jerome B., Abernathey, John R., Stiffler, Scott, Sedgwick, Thomas O.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/747,746
• Time in Patent Office: 393 Days
• Field of Search: 29/571, 29/576 E, 29/576 B, 29/576 R, 148/1.5, 148/175, 204/192 EC, 204/192 E, 204/192 N, 427/85, 427/86, 427/93, 427/94, 427/95, 156/628, 156/630, 156/633, 156/643, 156/646, 156/645, 156/657, 156/662, 252/79.1, 252/79.3, 252/79.5
• US Class Current: 438/459
• CPC Class Codes: H01L 21/02107 Forming insulating materials on a substrate
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A method of forming a thin silicon layer upon which semiconductor devices may be constructed. An epitaxial layer is grown on a silicon substrate, and oxygen or nitrogen ions are implanted into the epitaxial layer in order to form a buried etch-stop layer therein. An oxide layer is grown on the epitaxial layer, and is used to form a bond to a mechanical support wafer. The silicon substrate is removed using grinding and/or HNA, the upper portions of the epitaxy are removed using EDP, EPP or KOH, and the etch-stop is removed using a non-selective etch. The remaining portions of the epitaxy forms the thin silicon layer. Due to the uniformity of the implanted ions, the thin silicon layer has a very uniform thickness.

Claims

1. A method of forming a thin semiconductor layer of substantially uniform thickness upon which semiconductor structures can be subsequently formed, comprising the steps of:

forming layer of silicon upon a silicon substrate;

implanting ions into said silicon layer in order to form a buried layer therein, said buried layer having etch characteristics which differ from those of said silicon layer;

bonding said silicon layer to a mechanical substrate;

removing said silicon substrate and portions of said silicon layer between said silicon substrate and said buried layer; and

removing said buried layer without removing under-laying portions of said silicon layer,

whereby said underlaying portions of said silicon layer remain on said mechanical substrate to form the thin semiconductor layer.

2. The method as recited in claim 1, wherein said silicon substrate is of a first conductivity type and said silicon layer is of a second conductivity type.

3. The method as recited in claim 1, wherein said ions comprise oxygen ions, such that said buried layer is comprised of silicon oxide.

4. The method as recited in claim 1, wherein said ions comprise nitrogen ions, such that said buried layer is comprised of silicon nitride.

5. The method as recited in claim 1, wherein said ions comprise carbon ions, such that said buried layer is comprised of silicon carbide.

6. The method of claim 1, wherein said substrate is heated to approximately 500°

C. during said implantation.

7. The method as recited in claim 1, wherein said step of bonding said epitaxial layer to a mechanical substrate comprises the steps of:

forming a layer of silicon dioxide on an exposed surface of said silicon layer;

bringing said layer of silicon dioxide and said mechanical substrate into contact; and

heating said silicon dioxide layer and said mechanical substrate in order to form a bond therebetween.

8. The method as recited in claim 7, wherein said heating step is carried out at a temperature between approximately 700°

C.-1200°

C. in an oxidizing ambient.

9. The method as recited in claim 7, wherein a second layer of silicon dioxide is grown on said mechanical substrate, such that said silicon dioxide layer formed on said silicon layer contacts said second layer of silicon dioxide during said bonding step.

10. The method as recited in claim 1, wherein said step of bonding said epitaxial layer to a mechanical substrate comprises the steps of:

forming a layer of silicon nitride on an exposed surface of said silicon layer;

forming a glass layer on said silicon nitride layer;

bringing said glass layer and said mechanical substrate into contact; and

heating said glass layer above its glass transition temperature in order to form a bond to said mechanical substrate.

11. The method as recited in claim 10, wherein said glass layer is heated to approximately 900°

C.

12. The method as recited in claim 10, wherein said glass layer is selected from the group consisting of phosphosilicate glass and boro-phosphosilicate glass.

13. The process as recited in claim 2, wherein said step of removing said silicon substrate and portions of said epitaxial layer overlaying said buried layer comprises the steps of:

mechanically removing a portion of said silicon substrate;

etching remaining portions of said silicon substrate and a part of said portion of said epitaxial layer between said silicon substrate and said buried region in a first etchant which does not appreciably attack a remaining part of said portion of said silicon layer between said silicon substrate and said buried region; and

etching said remaining part of said portion of said silicon layer between said silicon substrate and said buried region in a second etchant which does not appreciably attack said buried layer.

14. The process as recited in claim 13, wherein said first etchant comprises a solution of hydroflouric, nitric and acetic acids.

15. The process as recited in claim 14, wherein said first etchant further comprises hydrogen peroxide.

16. The process as recited in claim 15, wherein said first etchant is ultrasonically agitated.

17. The process as recited in claim 13, wherein said second etchant comprises a solution selected from the group consisting of ethylene-diamine-pyrocatecol, ethylene-piperidine-pyrocatechol, and potassium hydroxide.

18. The process as recited in claim 1, wherein said step of removing said buried layer is performed by oxidation and subsequent etching using hydroflouric acid as an etchant.

19. The process as recited in claim 1, wherein said step of removing said buried layer is performed by etching in a CF₄ +O₂ plasma.

20. The process as recited in claim 1, wherein said ions are implanted at a concentration within the range of 1×

10^16- 1×

10¹⁸ ions/cm² and at an energy of approximately 160 kev.

21. A method of forming a thin semiconductor layer of substantially uniform thickness upon which semiconductor structures may be subsequently formed, comprising the steps of:

growing an silicon layer of a second conductivity type upon a silicon substrate of a first conductivity type;

implanting ions into said epitaxial layer in order to form a substantially planar buried layer of substantially uniform thickness therein, said buried layer having etch characteristics which appreciably differ from those of said epitaxial layer;

bonding said epitaxial layer to a mechanical substrate;

removing said semiconductor substrate and a portion of said epitaxial layer in an etchant which attacks silicon of said first conductivity type while not appreciably attacking silicon of said second conductivity type;

etching remaining portions of said epitaxial layer overlaying said buried layer in an etchant which does not appreciably attack underlaying portions of said buried layer; and

etching said buried layer in an etchant which does not appreciably attack underlaying portions of said epitaxial layer, said underlaying portions of said epitaxial layer remaining on said mechanical substrate to form the thin semiconductor layer.

22. The method as recited in claim 21, wherein said ions comprise oxygen ions which are implanted at a concentration within the range of 1×

10¹⁶ -1×

10¹⁸ ions/cm² at an energy of 160 kev, said ions reacting with said epitaxial layer such that said buried layer is comprised of silicon oxide.

23. The method as recited in claim 21, wherein:

said first etchant comprises a solution of hydroflouric, nitric and acetic acids, and hydrogen peroxide, which is ultrasonically agitated in order to improve selectivity; and

said second etchant comprises a solution selected from the group consisting of ethylene-diamine-pyrocatechol acid and ethylene-piperidine-pyrocatechol acid.

24. The process as recited in claim 21, wherein prior to said step of removing said semiconductor substrate, a protective layer of silicon dioxide is formed on a surface of said mechanical substrate which remains exposed after said bonding step.

25. A method for forming a thin silicon-on-insulator structure, comprising:

forming a silicon layer of a first conductivity type on a first semiconductor wafer of a second conductivity type establishing a N/P junction therewith within said silicon layer;

implanting into a portion of said silicon layer ions of a material which has different etching characteristics than the adjoining first portions of said silicon layer, to form a buried layer;

forming a silicon dioxide layer on said silicon layer, and bonding onto said silicon dioxide layer a second semiconductor wafer;

removing said first semiconductor wafer and a portion of said silicon layer disposed between said first semiconductor layer and said buried layer with a first etchant which attacks silicon of said first conductivity type without attacking silicon of said second conductivity type, so as to expose said N/P junction;

removing a remainder of said portion of said silicon layer disposed between said first semiconductor layer and said buried layer with a second etchant that stops appreciable etching at said buried layer; and

removing said buried layer with a third etchant which stop etching at the underlaying unimplanted portion of said silicon layer, thereby resulting in a thin sliicon layer of a predetermined uniform thickness atop a silicon diioxide layer which is atop said second semiconductor wafer.

26. A method of forming a silicon-on-insulator structure, comprising the steps of:

growing an epitaxial layer of a second conductivity type on a silicon substrate of a first conductivity type in order to form a N/P junction therewith within said epitaxial layer;

forming a silicon dioxide layer on an exposed surface of said epitaxial layer;

implanting dopant ions through said silicon dioxide layer into said epitaxial layer in order to form a buried layer of said first conductivity type within said epitaxial layer;

bonding said silicon substrate to a mechanical substrate, using said silicon dioxide layer as a bonding material;

removing said silicon substrate and portions of said epitaxial layer between said silicon substrate and said N/P junction with a first etchant which does not appreciably attack silicon of said second conductivity type;

removing portions of said epitaxial layer between said N/P junction and a peak concentration of said dopant ions within said buried layer with a second etchant; and

removing remaining portions of said buried layer with said of first etchant, remaining portions of said epitaxial layer overlaying said silicon dioxide layer to form the silicon-on-insulator structure.

27. The method as recited in claim 26, wherein said dopant ions comprise boron, which is implanted at a concentration of approximately 6×

10¹⁴ ions/cm² at an energy of approximately 2.0 Mev.