Thin film integrated device

• US 4,602,192 A
• Filed: 11/27/1984
• Issued: 07/22/1986
• Est. Priority Date: 03/31/1983
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Abe, Atsushi, Ogawa, Hisahito, Nitta, Tsuneharu, Nomura, Koji
• Primary Examiner(s): Dixon, Harold
• Application Number:
  US06/678,547
• Time in Patent Office: 602 Days
• Field of Search: 357/41, 357/23.15, 357/52, 315/169.3
• US Class Current: 315/169.3
• CPC Class Codes: H01B 3/12 ceramics
• CPC Class Codes: H01G 4/10 Metal-oxide dielectrics H01G4/085 takes precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/78681 having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: H05B 33/22 characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers

Abstract

In a thin film integrated device wherein thin film elements, such as thin film condensers, thin film field effect type transistors and thin film electroluminescent elements, which include insulating films (3, 7, 13, 15, 16) as one of their constitution elements, are formed on an insulating substrate; the insulating films are made of sputtered composite oxide films with at least tantalum and aluminum as major constituents. Since this sputtered composite oxide film has characteristics with a large dielectric constant and a breakdown field intensity and a small leakage current, if it is applied in the thin film elements, their operation characteristics can be increased and their reliability can be remarkably improved.

Claims

1. A thin film integrated device wherein at least one thin film element is supported on an insulating substrate, characterized in that said thin film element includes a sputtered composite oxide thin film comprising major constituents of at least tantalum and aluminum.

2. A thin film integrated device according to claim 1, characterized in that x/(x+y) is from 0.2 to 0.7 where x is the number of tantalum atoms and y is the number of aluminum atoms in the sputtered composite oxide thin film.

3. A thin film integrated device according to claim 1, characterized in that said thin film element is at least one of a thin film condenser, a thin film transistor and a thin film light emitting element.

4. A thin film integrated device according to claim 1, characterized in that said thin film element is a thin film condenser where a first electrode layer, a dielectric thin film and a second electrode layer are overlaid on an insulating substrate and in that said dielectric thin film is a sputtered composite oxide thin film.

5. A thin film integrated device according to claim 1, characterized in that said thin film element is a thin film field effect type transistor constituted with at least a drain electrode, a gate electrode, a source electrode, a semiconductor layer and a gate insulation film and that said gate insulation film is a sputtered composite oxide thin film.

6. A thin film integrated device according to claim 5, characterized in that said semiconductor layer is constituted with cadmium selenide (CdSe).

7. A thin film integrated device wherein a thin film field effect type transistor having at least a drain electrode, a gate electrode, a source electrode, a semiconductor layer and a gate insulation film is supported on an insulating substrate, characterized in that said gate insulating film is a sputtered composite oxide thin film of at least tantalum and aluminum as major constituents.

8. A thin film integrated device according to claim 7, characterized in that said semiconductor layer is constituted with cadmium selenide (CdSe).

9. A thin film integrated device according to claim 7, characterized in that x/(x+y) is from 0.2 to 0.7 where the number of tantalum atoms is x and the number of aluminum atoms is y in the sputtered composite oxide thin film.

10. A thin film integrated device comprising a thin film light emitting element supported on an insulating substrate and having at least a pair of electrode layers, a phosphor thin film provided between these electrode layers and emitting light in response to a voltage applied between said electrode layers, and an insulation layer interposed between at least one of said electrode layers and said phosphor thin film, said device being characterized in that said insulation film is a sputtered composite oxide thin film of at least tantalum and aluminum as major constituents.

11. A thin film integrated device according to claim 10, characterized in that x/(x+y) is from 0.2 to 0.7 where the number of tantalum atoms is x and the number of aluminum atoms is y in the sputtered composite oxide thin film.

12. A thin film integrated device according to claim 10, characterized in that said phosphor thin film is a light emission layer with zinc sulfide as a major constituent containing a luminescent activator.

13. A thin film integrated device according to claim 12, characterized in that said luminescent activator is of at least a kind selected from a group of Mn, Cu, Ag, Al, Tb, Dy, Er, Pr, Sm, Ho, Tm and their halides.

14. A thin film integrated device according to claim 10 and comprising a thin film condenser, first and second thin film field effect type transistors supported and disposed together with said thin film light emitting element in a matrix form on said insulating substrate, said thin film condenser having a dielectric thin film and electrodes contact with the both surfaces of said dielectric thin film;

said field effect type transistors having a cadmium selenide thin film, drain and source electrodes contact with said cadmium selenide thin film, and a gate electrode disposed with interposition of a gate insulation film on part of said cadmium selenide thin film between said drain and source electrodes;

said thin film light emitting element being connected between the drain and source electrodes of said first thin film field effect type transistor;

said thin film condenser being connected between the source and gate electrodes thereof;

further the source electrode of said second thin film field effect type transistor being connected to the gate electrode of said first thin film electric effect transistor;

whereby said device defines a thin film electroluminescence element to form a visible information pattern by selectively applying a signal voltage between the gate and drain electrodes of said second thin film field effect type transistor and is characterized in that the dielectric thin film of said thin film condenser and the gate insulation film of said thin film field effect type transistors are made of sputtered composite oxide thin films of at least tantalum and aluminum as major constituents.