Formation and planarization of silicon-on-insulator structures

• US 4,604,162 A
• Filed: 12/23/1985
• Issued: 08/05/1986
• Est. Priority Date: 06/13/1983
• Status: Expired due to Term

• Current Assignee: Magnachip Semiconductor Limited (Magnachip Semiconductor)
• Original Assignee: NCR Corporation
• Inventors: Sobczak, Zbigniew P.
• Primary Examiner(s): MASSIE, JEROME W
• Application Number:
  US06/812,531
• Time in Patent Office: 225 Days
• Field of Search: 156/632, 156/643, 156/649, 156/653, 156/657, 156/662, 156/668, 29/576 W, 29/580, 427/93, 427/94, 427/95, 427/337, 427/308, 427/407.1, 427/399, 204/192 EC
• US Class Current: 438/410
• CPC Class Codes: H01L 21/31055 the removal being a chemical etching step, e.g. dry etching etching per se H01L21/311
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
• CPC Class Codes: H01L 21/76281 Lateral isolation by selective oxidation of silicon

Abstract

A process for fabricating silicon-on-insulator structures on semiconductor wafers and planarizing the topology of the patterns formed from the silicon. In the composite, the process provides for the formation of monocrystalline silicon islands electrically isolated by dielectric in substantially coplanar arrangement with surrounding dielectric. According to one practice of the process, substrate silicon islands are initially formed and capped, and thereafter used as masks to direct the anisotropic etch of the silicon substrate to regions between the islands. During the oxidation which follows, the capped and effectively elevated silicon islands are electrically isolated from the substrate by lateral oxidation through the silicon walls exposed during the preceding etch step. The capped regions, however, remain substantially unaffected during the oxidation. With the electrically isolated silicon island in place, a silicon dioxide layer and a planarizing polymer layer are deposited over the wafer. Processing is concluded with a pair of etching operations, the first removing polymer and silicon dioxide at substantially identical rates, and the second removing silicon dioxide and monocrystalline silicon at substantially identical rates.

Claims

1. A process for fabricating planarized silicon insulator structures on a semiconductor wafer, comprising the steps of:

etching a monocrystalline silicon substrate to form islands of silicon having defined perimeters;

capping the tops and sides of the silicon islands with oxidation masks;

anisotropically etching deeper into the monocrystalline silicon substrate between the capped island and with no material undercut of the capped islands to increase the relative height of the islands;

oxidizing the lateral walls of silicon formed by the anisotropic etch until the capped silicon is electrically isolated from the silicon substrate;

depositing a dielectric layer to a thickness greater than the height of the islands;

forming a planarized polymer layer over the dielectric layers;

simultaneously etching the polymer and dielectric layers to remove polymer and dielectric material at substantially equal rates until the polymer layer is absent; and

simultaneously etching the dielectric layer and the electrically isolated silicon to remove dielectric material and silicon at substantially equal rates.

2. The process as recited in claim 1, wherein said steps of etching the silicon substrate between the islands to increase the relative height of the islands is comprised of an anisotropic etch to a depth proportional to the width of the islands.

3. The process recited in claim 2, wherein said step of forming a planarized polymer layer over the dielectric layer is comprised of depositing and reflowing polystyrene or polymethylmethacrylate characterized by low viscosity and surface tension when in a molten state.

4. The process recited in claim 3, wherein said step of depositing a dielectric layer is comprised of a plasma enhanced chemical vapor deposition of silicon dioxide.

5. The process recited in claim 4, wherein said step of depositing a dielectric layer is preceded by the step of stripping the capping material from the islands.

6. The process recited in claim 5, wherein said step of oxidizing exposed silicon until the capped silicon is electrically isolated from the silicon substrate is comprised of thermal oxidation to grow silicon dioxide to the level of a capped silicon.

7. The process recited in claim 6, wherein said step of capping the tops and sides of the silicon islands is comprised of:

forming a silicon nitride layer over silicon islands already having PAD oxide, silicon nitride and silicon dioxide on the island tops; and

anisotropically etching the silicon nitride layer to expose the silicon dioxide on the island tops and the silicon substrate between the islands.

8. A process for fabricating silicon-on-insulator structures on a semiconductor wafer, comprising the steps of:

etching a monocrystalline silicon substrate to form islands of silicon having defined perimeters;

capping the tops and sides of thee silicon islands with oxidation masks;

anisotropically etching deeper into the silicon substrate between the capped islands and with no material undercut of the capped islands to increase the relative height of the islands; and

oxidizing the lateral walls of silicon formed by the anisotropic etch until the capped silicon is electrically isolated from the silicon substrate.

9. The process recited in claim 8, wherein said step of etching the silicon substrate between the islands to increase the relative height of the islands is comprised of an anisotropic etch to a depth proportional to the width of the islands.

10. The process recited in claim 9, wherein said step of oxidizing exposed silicon until the capped silicon is electrically isolated from the silicon substrate is comprised of a thermal oxidation to grow silicon dioxide to the level of the capped silicon.

11. The process recited in claim 10, wherein said step of capping the tops and sides of the silicon islands is comprised of:

forming a silicon nitride layer over silicon islands already having PAD oxide, silicon nitride and silicon dioxide on the island tops; and

anisotropically etching the silicon nitride layer to expose silicon dioxide on the island tops and the silicon substrate between the islands.