Multiple wavelength light emitting devices

• US 4,605,942 A
• Filed: 10/09/1984
• Issued: 08/12/1986
• Est. Priority Date: 10/09/1984
• Status: Expired due to Fees

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: AT&T, Inc.
• Inventors: Chin, Aland K., Camlibel, Irfan, Chin, Brymer H.
• Primary Examiner(s): Davie, James W.
• Assistant Examiner(s): Epps, Georgia Y.
• Application Number:
  US06/658,568
• Time in Patent Office: 672 Days
• Field of Search: 372/50, 372/45, 372/36, 357/17, 357/81, 350/96.15
• US Class Current: 257/89
• CPC Class Codes: G02B 6/423 using guiding surfaces for the alignment
• CPC Class Codes: G02B 6/4249 comprising arrays of active devices and fibres
• CPC Class Codes: H01L 25/0756 Stacked arrangements of devices
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0016 having at least two p-n junctions

Abstract

Presented is a dual wavelength structure wherein two edge-emitting devices are bonded with p-regions adjacent. The bonding medium is a conductive compound that forms a common electrode between the devices. Each device is separately addressable. Efficient coupling of emitted light into a single fiber is accomplished by restricting the vertical and horizontal separation of the light emitting stripes.

Claims

1. A multiwavelength light emitting device comprising:

two light emitting devices, each comprising a confined light emitting region which emits light at a different wavelength, said devices being bonded with a conductive material that forms a common electrode between them, the light emitting regions being sufficiently close together to couple light from both regions into a single optical fiber; and

means for electrically addressing each device separately.

2. The multiwavelength device according to claim 1 further comprising a heat sink between each light emitting device and the common electrode.

3. The multiwavelength device according to claim 1 wherein the vertical separation of the light emitting regions lies within the range of 5 μ

m to 100 μ

m.

4. The multiwavelength device according to claim 1 wherein the vertical separation of the light emitting regions is no greater than 25 μ

m.

5. The multiwavelength device according to claim 1 wherein the means for electrically addressing each light emitting device comprises ohmic contact layers formed on the surfaces of the light emitting devices opposite the bonded surfaces.

6. The multiwavelength device according to claim 1 wherein the length of one light emitting device is greater than the length of the other light emitting device, in order to permit electrical access to the common electrode.

7. The multiwavelength device according to claim 2 wherein the heat sink serves also as a shield against photo-excitation of one device by the other.

8. The multiwavelength device according to claim 1 wherein each device includes an n-type region and a p-type region, and the devices are bonded so that their p-type regions are in close proximity without any intervening n-type region.

9. The multiwavelength device according to claim 1 further comprising an optical fiber which is aligned with said light emitting regions so that light from both regions is coupled into said fiber.