Method and apparatus for monitoring etching

• US 4,609,426 A
• Filed: 05/22/1985
• Issued: 09/02/1986
• Est. Priority Date: 05/23/1984
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Okudaira, Sadayuki, Ogawa, Yoshifumi, Nishiumi, Masaharu, Nishimatsu, Shigeru, Tanaka, Yoshie
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/736,769
• Time in Patent Office: 468 Days
• Field of Search: 156/626, 156/627, 156/643, 156/646, 156/653, 156/659.1, 156/657, 156/662, 156/345, 156/656, 204/192 E, 204/298, 356/72, 356/313, 356/316, 356/437
• US Class Current: 216/60
• CPC Class Codes: G01N 21/62 Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
• CPC Class Codes: G01N 2201/122 Kinetic analysis; determining reaction rate
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

This invention relates to a method and apparatus for monitoring etching. The monitor method comprises the steps of regulating a gas pressure inside a treating chamber, in which a sample is being etched by a dry etching process, to a pressure at which a emission line spectrum can be clarified, converting the gas whose pressure is regulated to plasma, and monitoring the etching state of the sample from the change of the intensity of the emission line spectrum with time. The monitor apparatus comprises exhaust means for discharging a gas from a treating chamber in which a sample is being etched by a dry etching process, plasma means for introducing the gas discharged from the treating chamber and converting it plasma, pressure regulation means for regulating the pressure of the gas at the plasma means to a pressure at which a emission line spectrum can be clarified, and spectrum detection means for detecting the emission line spectrum of the plasma at the plasma means, and detecting the change of the intensity of the detected emission line spectrum with time.

Claims

1. A method of monitoring etching which comprises the steps of:

regulating a gas pressure in a treating chamber, in which a sample is being etched by a dry etching process, to a pressure at which a emission line spectrum can be clarified;

Converting the gas having the pressure thereof regulated to plasma; and

monitoring the etching state of said sample from the change of the intensity of the emission line spectrum of the plasma with time.

2. The method of monitoring etching as defined in claim 1 wherein the gas having the pressure thereof regulated is converted to the plasma by discharge having great dissociation.

3. The method of monitoring etching as defined in claim 2 wherein the gas having the pressure thereof regulated is converted to the plasma by microwave discharge.

4. The method of monitoring etching as defined in claim 2 wherein the gas having the pressure thereof regulated is converted to the plasma by spark discharge.

5. The method of monitoring etching as defined in claim 1 wherein the pressure of the gas to be converted to the plasma is regulated to a pressure of up to 4.0×

10^-2 Torr.

6. The method of monitoring etching as defined in claim 5 wherein said sample is a sample having a polycrystalline silicon film, and said emission line spectrum is that of silicon fluoride.

7. The method of monitoring etching as defined in claim 6 wherein said emission line spectrum of silicon fluoride is a emission line spectrum having a 440 nm wavelength, and the etching state of said sample is monitored from the change of the intensity of said emission line spectrum with time.

8. An apparatus for monitoring etching which comprises:

exhaust means for discharging a gas from a treating chamber in which a sample is being etched by a dry etching process;

plasma means for introducing said gas discharged from said treating chamber and converting it to plasma;

pressure regulation means for regulating the pressure of said gas at said plasma means to a pressure at which a emission line spectrum can be clarified; and

spectrum detection means for detecting the emission line spectrum of said plasma at said plasma means, and detecting the change of the intensity of said detected emission line spectrum with time.

9. The apparatus for monitoring etching as defined in claim 8 wherein said plasma means consists of a sub-chamber into which said gas discharged from said treating chamber is introduced, a waveguide incorporating therein said sub-chamber and connected to a magnetron, and magnets generating microwave discharge together with said magnetron inside said sub-chamber.

10. The apparatus for monitoring etching as defined in claim 8 wherein said plasma means consists of a sub-chamber into which said gas discharged from said treating chamber is introduced, and projection members, each having one of the ends thereof connected to a power source and the other end disposed in such a manner as to face the other end of the other of said projection members inside said treating chamber.

11. The apparatus for monitoring etching as defined in claim 10 wherein said projection members are made of a material different from that of said sample.