Method of dicing a semiconductor wafer

• US 4,610,079 A
• Filed: 02/26/1985
• Issued: 09/09/1986
• Est. Priority Date: 01/22/1980
• Status: Expired due to Term

• Current Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
• Original Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
• Inventors: Abe, Masahiro, Yonezawa, Toshio, Nakamura, Hatsuo, Miyagawa, Masafumi
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US06/705,844
• Time in Patent Office: 560 Days
• Field of Search: 29/413, 29/414, 29/550, 29/581, 29/582, 29/583
• US Class Current: 438/462
• CPC Class Codes: H01L 21/3043 Making grooves, e.g. cutting
• CPC Class Codes: Y10S 148/028 Dicing
• CPC Class Codes: Y10T 225/12 With preliminary weakening
• CPC Class Codes: Y10T 29/4979 Breaking through weakened portion
• CPC Class Codes: Y10T 29/49792 Dividing through modified portion

Abstract

A method of dicing a semiconductor wafer in which a physical discontinuity is formed on the surface of the wafer on both sides of a dicing line to limit the spreading of cracks and chips generated during dicing. Thereafter, the semiconductor wafer is diced to separate the pellets.

Claims

1. A method of preparing a semiconductor wafer for dicing along a predetermined dicing line, comprising the steps of:

forming a groove on a surface of said wafer, said groove straddling said dicing line and substantially preventing the spread of cracks from said dicing line, said groove having a width of substantially 60 μ

m and a height; and

forming a scribe line in said semiconductor wafer along said dicing line, said scribe line being deeper than the height of said groove and less than the thickness of said wafer, said scribe line being narrower than the width of said groove to limit said cracks to propagation substantially within said groove width to allow for dense packing of active element areas on said wafer.

2. The method according to claim 1, wherein said physical discontinuity forming step includes the step of non-mechanically removing a portion of said wafer to form said discontinuity.

3. A method of dicing a semiconductor wafer comprising the steps of:

nonmechanically forming a groove in said semiconductor wafer, said groove having a width and a vertical distance, said width being substantially equal to 60 μ

m;

mechanically forming a scribe line in said semiconductor wafer through said groove, said scribe line having a depth greater than said vertical distance, and a width less than said groove width to cause cracks to be stopped substantially within said groove width to permit dense packing of active element areas on said wafer; and

breaking said semiconductor wafer along said scribe line.