×

Electrode for plasma etching system

  • US 4,612,077 A
  • Filed: 07/29/1985
  • Issued: 09/16/1986
  • Est. Priority Date: 07/29/1985
  • Status: Expired due to Term
First Claim
Patent Images

1. An electrode for plasma etching including a source of process gas to be delivered to a reactor etching chamber comprising:

  • (a) a plurality of concentric rings surrounding a center disc and disposed to rest inside each other;

    (b) said rings and said disc forming annular plenum chambers therebetween; and

    said rings and disc further providing a plurality of openings therein leading from said source of process gas to said plenums; and

    (c) said rings being spaced to provide annular slits therebetween for transferring gas from said plenums into said reactor etching chamber.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×