Method for the fabrication of an implantable electrode

• US 4,612,100 A
• Filed: 12/13/1984
• Issued: 09/16/1986
• Est. Priority Date: 12/20/1983
• Status: Expired due to Fees

• Current Assignee: Pacesetter AB
• Original Assignee: Siemens AG
• Inventors: Schack, Peter, Mund, Konrad, Freller, Helmut, Edeling, Martin
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Leader, William T.
• Application Number:
  US06/681,181
• Time in Patent Office: 642 Days
• Field of Search: 204/192 C, 204/192 SP, 128/419 P, 128/784, 128/785, 128/786
• US Class Current: 204/192.15
• CPC Class Codes: A61L 27/303 Carbon
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence

Abstract

In a method for manufacturing an implantable electrode, particularly a stimulating electrode, vitreous carbon is sputtered from a vitreous carbon target on at least a part of the surface of the electrode. The sputtering is performed in an argon atmosphere at a pressure of 4 to 8×10^-2 mbar and at a voltage of 1.6 to 2.4 kV. The electrode may consist essentially of platinum-iridium, vitreous carbon or platinum.

Claims

1. In a method for manufacturing an electrode implantable in the tissues of a living organism, said electrode having a body portion with an outer surface, the improvement comprising the step of sputtering a layer of vitreous carbon from a target of vitreous carbon on at least a portion of the outer surface of the electrode body portion, said layer having a microporous structure and said step of sputtering being performed at a pressure 4 to 8×

10^-2 mbar and at a voltage of 1.6 to 2.4 kV with a power input 0.5 to 1.5 kW.

2. The improvement defined in claim 1 wherein said step of sputtering is performed in an argon atmosphere at a pressure of 5 to 7×

10^-2 mbar.

3. The improvement defined in claim 2 wherein said step of sputtering is performed in an argon atmosphere at a pressure of approximately 6×

10^-2 mbar.

4. The improvement defined in claim 1 wherein said step of sputtering is performed at a voltage of 1.8 to 2.2 kV.

5. The improvement defined in claim 4 wherein said step of sputtering is performed at a voltage of approximately 2.1 kV.

6. The improvement defined in claim 1 wherein said body portion consists essentially of platinum.

7. The improvement defined in claim 1 wherein said body portion consists essentially of platinum-iridium.

8. The improvement defined in claim 1 wherein said body portion consists essentially of vitreous carbon.

9. The improvement defined in claim 1 wherein said body portion consists essentially of an alloy containing cobalt, chromium, iron, nickel, molybdenum, and manganese and is provided with a platinum film forming said outer surface.

10. The improvement defined in claim 1 wherein the step of sputtering is performed in an argon atmosphere.