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Thin film solar cell with ZnO window layer

  • US 4,612,411 A
  • Filed: 06/04/1985
  • Issued: 09/16/1986
  • Est. Priority Date: 06/04/1985
  • Status: Expired due to Term
First Claim
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1. A thin film photovoltaic device comprising, in order, a first layer of copper indium diselenide semiconductor, a second layer of high resistivity zinc oxide semiconductor in contact with said first layer, and a third layer of low resistivity zinc oxide semiconductor in contact with said second layer.

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