Formation of etch-resistant resists through preferential permeation

• US 4,613,398 A
• Filed: 06/06/1985
• Issued: 09/23/1986
• Est. Priority Date: 06/06/1985
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Yang, Jer-Ming, Chiong, Kaolin N., Yang, Bea-Jane L.
• Primary Examiner(s): BOWERS JR, CHARLES L
• Application Number:
  US06/741,779
• Time in Patent Office: 474 Days
• Field of Search: 156/628, 156/643, 156/646, 156/659.1, 156/668, 156/904, 427/43.1, 427/40, 427/41, 430/296, 430/313
• US Class Current: 430/323
• CPC Class Codes: G03F 7/265 Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Abstract

A method is provided for creation of oxygen etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines. These etch-resistant polymeric films find use in fabrication of complex structures such as those in electronic devices and magnetic thin film heads. The etch resistance is achieved by incorporation of a protective-oxide-forming metal into a polymeric material using preferential permeation of organometallic materials into the polymeric material.

Claims

1. A method of creating etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines, comprising:

(a) applying a layer of polymeric resist material to a substrate;

(b) exposing said layer of polymeric resist material to at least one kind of patterned radiation capable of altering the permeability of said polymeric resist material; and

(c) preferentially permeating/diffusing an organometallic material into the surface of said polymeric resist material, to provide each resistance within the portion of said polymeric resist material within which significant permeation of said organometallic material occurs.

2. The method of claim 1 wherein exposure of said polymeric resist material to said patterned radiation decreases the premeability of said resist material within said irradiated areas.

3. The method of claim 1 wherein exposure of said polymeric resist material to said patterned radiation increases the permeability of said resist material within said irradiated areas.

4. The method of claim 1 wherein said organometallic material reacts with at least portions of said polymeric resist material.

5. The method of claim 1 wherein said organometallic material does not react with said polymeric resist material.

6. The method of claims 1, 2, or 3, wherein said etch-resistant portion, and any polymeric material protected by such etch-resistant portion, is dry developed using plasma or reactive ion etching, wherein the active plasma/etchant is oxygen or a combination of oxygen with a halogen-containing compound.

7. The method of claims 1, 2, or 3, wherein said polymeric resist material comprises a material selected from the group consisting of photodegradable polymers which undergo chain scission or fragmentation upon irradiation, mixtures of photoactive compound and polymeric material, and combinations thereof, wherein said polymeric resist material may or may not comprise functional groups capable of reacting with an organometallic material.

8. The method of claims 1, 2, or 3 wherein said polymeric resist material comprises a material selected from the group consisting of photocross linkable polymers, mixtures of polymeric resins with crosslinkable polyfunctional reagents, mixtures of polymeric resins with sensitizers/photoinitiators, and combinations thereof, wherein said polymeric resist material may or may not comprise functional groups capable of reacting with an organometallic material.

9. A method of creating positive tone etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines, comprising:

(a) applying a layer of polymeric resist material to a substrate, wherein said polymeric resist material comprises a photocrosslinkable polymer;

(b) exposing said layer of polymeric resist material to patterned radiation, wherein said radiation induces crosslinking of said polymeric material as the dominant reaction; and

(c) preferentially permeating/diffusing an organometallic material into the surface of said polymeric resist material, to provide an etch-resistant latent image within said polymeric resist material, wherein said etch-resistance occurs within the portion of said polymeric resist material which has not been irradiated.

10. The method of claim 9, wherein said photocrosslinkable polymer contains functional groups capable of reacting with an organometallic material.

11. The method of claim 10, wherein said functional groups are selected from the group consisting of hydroxy, carboxyl, phenol, amine and imide NH.

12. The method of claim 9, wherein said photocrosslinkable polymer is selected from the group consisting of novolak resins, resoles, polyvinyl phenol, and polymers comprizing azido groups.

13. A method of creating positive tone etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines, comprising:

(a) applying a layer of polymeric resist material to a substrate, wherein said polymeric resist material is a combination of a photoactive compound and at least one polymer;

(b) exposing said layer of polymeric resist material to patterned radiation, wherein said radiation induces crosslinking of said polymeric resist material as the dominant reaction; and

(c) preferentially permeating an organometallic material into the surface of said polymeric resist material, to provide an etch-resistant latent image within said polymeric resist material, wherein said etch-resistance occurs within the portion of said polymeric resist material which has not been irradiated.

14. The method of claim 13, wherein said photoactive compound comprises at least one azide of the general structure:

space="preserve" listing-type="equation">RN.sub.3

where R may be alkyl, aryl, acyl, or sulfonyl, or an azide group incorporated as a polymer side chain.

15. The method of claim 14, wherein said at least one azide is selected from the group consisting of di-(p-azidophenyl)sulfide, di-(m-azidophenyl)sulfone and 3,3'"'"'-diazidobenzophenone.

16. The method of claim 13, wherein said photoactive compound is a sensitizer/photoinitiator selected from the group consisting of naphthothiazoline, nitrophenyl derivatives, azides, quinones, and onium salts.

17. The method of claim 13, wherein at least one of said at least one polymers contains functional groups capable of reacting with an organometallic material.

18. The method of claim 13, wherein said polymer is selected from the group consisting of unsaturated polymeric resins, polymeric resins combined with unsaturated monomers, branched monomers such as polyfunctional acrylates, epoxides, novolak resins, resoles, polyvinyl phenol, and polymers comprising azido groups.

19. The method of claim 13, wherein said at least one polymer is selected from predominantly scission/fragmentation polymers such as copolymers containing methacrylic acid or methacrylic esters, and wherein the radiation source used will not degrade the polymer to the extent that the crosslinking reactions initiated by said photoactive compound are not the dominant reactions.

20. The method of claims 9 or 13 including an additional step wherein said etch-resistant latent image is developed into a patterned resist using dry etching techniques such as plasma or reactive ion etching, wherein the active plasma/etchant is oxygen or a combination of oxygen with a halogen-containing compound.

21. A method of creating negative tone etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines, comprising:

(a) applying a layer of polymeric resist material to a substrate, wherein said polymeric resist material is comprised of at least one photodegradable polymer which undergoes chain scission or fragmentation upon irradiation;

(b) exposing said layer of polymeric resist material to patterned radiation, wherein said radiation induces chain scission or fragmentation of said at least one photodegradable polymer as the dominant reaction; and

(c) preferentially permeating an organometallic material into the surface of said polymeric resist material, to provide an etch-resistant latent image within said polymeric resist material, wherein said etch-resistance occurs in the irradiated areas of said polymeric resist.

22. The method of claim 21 wherein said at least one photodegradable polymer contains functional groups capable of reacting with an organometallic material.

23. The method of claim 22 wherein said functional groups are selected from the group consisting of hydroxy, carboxyl, phenol, amine and imide NH.

24. The method of claim 21 wherein said at least one photodegradable polymer is selected from the group consisting of copolymers of methyl methacrylate and methacrylic acid, terpolymers of methyl methacrylate, methacrylic acid, and methacrylic anhydride, copolymers containing 2,4-dimethylglutarimide, copolymers containing maleimide, poly(2,4-dimethylglutarimide), copolymers containing methacrylic acid, terpolymers containing methacrylic acid, copolymers containing esterified methacrylates, terpolymers containing esterified methacrylates, copolymers containing α

methyl styrene, and terpolymers containing α

methyl styrene.

30. The method of claim 21 or 25 including an additional step wherein said etch-resistant latent image is developed into a patterned resist using dry etching techniques such as oxygen reactive ion etching, and plasma and ion etching wherein the active etchant is a combination of oxygen with a halogen-containing compound.

25. A method of creating negative tone etch-resistant polymeric films for use in the production of micron and submicron dimension patterns and fine lines, comprising:

(a) applying a layer of polymeric resist material to a substrate, wherein said polymeric resist material is a combination of a photoactive compound and at least one polymer, and wherein said at least one polymer may or may not be photodegradable.

(b) exposing said layer of polymeric resist material to patterned radiation, wherein said radiation induces chain scission or fragmentation of said photoactive compound, and chain scission or fragmentation of any photodegradable polymer present; and

(c) preferentially permeating an organometallic material into the surface of said polymeric resist material, to provide an etch resistant latent image within said polymeric resist material, wherein said etch-resistance occurs within the portion of said polymeric resist material irradiated.

26. The method of claim 25 wherein said at least one polymer contains functional groups capable of reacting with an organometallic material.

27. The method of claim 25 wherein said at least one polymer is selected from the group consisting of copolymers of methyl methacrylate and methacrylic acid, terpolymers of methyl methacrylate, methacrylic acid and methacrylic anhydride, copolymers containing 2,4-dimethylglutarimide, copolymers containing maleimide, poly(2,4-dimethylglutarimide), copolymers containing methacrylic acid, terpolymers containing methacrylic acid, copolymers of esterified methacrylates, terpolymers containing esterified methacrylates, copolymers of styrene, terpolymers of styrene, copolymers of substituted styrenes, terpolymers of substituted styrenes, novolak resins, resoles, polyvinylphenols, polyimides including polyamic acid, polyisoimide, and polyvinylpyrrolidone.

28. The method of claim 25 wherein said photoactive compound is selected from the group consisting of compounds comprising at least one of the following general structures:

##STR2## where R₁,R₂ can be H, alkyl, aryl, halogen, alkoxyl, or esterified sulfo groups;

R₃, R₄ represent alkyl, aryl, part of cyclic or heterocyclic groups.

29. The method of claim 25 wherein said photoactive compound is poly(alkenesulfone).