Resonant hollow beam and method

• US 4,614,119 A
• Filed: 03/08/1985
• Issued: 09/30/1986
• Est. Priority Date: 03/08/1985
• Status: Expired due to Fees

• Current Assignee: Foxboro Company The Foxboro Massachusetts
• Original Assignee: The Foxboro Company (Schneider Electric SE)
• Inventors: Senturia, Stephen D., Zavracky, Paul M., Morrison, Richard H. Jr.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/709,870
• Time in Patent Office: 571 Days
• Field of Search: 357/26, 357/29, 357/30, 156/628, 156/629, 156/630, 156/633, 156/634, 156/647, 156/651, 156/656, 156/659.1, 156/661.1, 156/657, 156/662, 148/1.5, 148/187, 29/572, 29/580, 73/700, 73/702, 73/704, 73/708, 73/715, 73/753, 73/754, 73/756, 73/726, 73/727
• US Class Current: 73/704
• CPC Class Codes: B81C 1/0015 Cantilevers switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244
• CPC Class Codes: B81C 2201/0136 by doping limited material regions
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: G01L 9/002 Optical excitation or measuring
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187

Abstract

A microminiature resonant hollow beam sensor is manufactured by micromachining and microfabrication techniques. Specifically, a sensor is formed by etching troughs in a pair of silicon substrates, joining the substrates face-to-face, and etching away unwanted material to free the resonant hollow beam sensors.

Claims

1. In the manufacture of small resonant sensor elements, the method of manufacturing resonant hollow microstructural beam sensors comprising:

(a) etching a trough in the front face surface of a first substrate;

(b) etching a complementary-image trough in the front face surface of a second substrate;

(c) doping the trough areas of said first and second substrates to a predetermined etch-stop depth;

(d) aligning the first and second substrates in precise registration with their respective front face surfaces joined;

(e) bonding said joined front face substrate surfaces together; and

(f) etching sufficient undoped substrate away from the doped substrate region to relieve the doped portion from the remaining substrate material, and leave a relieved, hollow microstructural cantilever beam.

2. The method of claim 1 including performing the additional step of depositing an etch stop on the reverse face surfaces of the respective substrates prior to step (f) to restrict the etching process in relieving the beam.

3. The method of claim 1 in which the substrate material is silicon.

4. The method of claim 1 in which the dopant source includes boron.

5. The method of claim 1 in which the doping is effected by ion implantation.

6. The method of claim 1 in which the joined substrate front face surfaces are bonded by electromigration.

7. The method of claim 1 in which the joined substrate front face surfaces are bonded by anodic bonding.

8. The method of claim 1 in which the joined front face substrates are bonded by aluminum diffusion bonding.

9. The method of claim 1 in which each trough is etched to a depth substantially within a range of 4×

10^-7 meters and 2×

10^-3 meters.

10. The method of claim 1 in which each etched trough depth is substantially within a range of 5×

10^-6 meters and 2×

10^-5 meters.

11. A resonant hollow microstructural cantilever beam sensor element formed by the process of:

(a) etching a trough in the front face surface of a first substrate;

(b) etching a complementary-image trough in the front face surface of a second substrate;

(c) doping the trough areas of said first and second substrates to a predetermined etch-stop depth;

(d) aligning the first and second substrates in precise registration with their respective front face surfaces joined;

(e) bonding said joined front face substrate surfaces together; and

(f) etching the undoped substrate from the doped substrate region to relieve the beam from the remaining substrate material.

12. A resonant hollow microstructural cantilever beam sensor element formed by the method of claim 11 and including performing the additional step of depositing an etch stop to the reverse face surfaces of the respective substrates prior to step (f) to restrict the etching process in relieving the beam.

13. The product according to claim 11 in which the substrate material is silicon.

14. The product according to claim 11 in which the doping source includes boron.

15. The product according to claim 11 in which the doping is effected by ion implantation.

16. The product according to claim 11 in which the joined front face substrate surfaces are bonded by electromigration.

17. The product according to claim 11 in which the joined front face substrate surfaces are bonded by anodic bonding.

18. The product according to claim 11 in which the joined front face substrates are bonded by aluminum diffusion bonding.

19. The product according to claim 11 in which each etched trough depth is substantially within a range of 4×

10^-7 meters and 2×

10^-3 meters.

20. The product according to claim 11 in which each etched trough depth is substantially within a range of 5×

10^-6 meters and 2×

10^-5 meters.

21. A microstructural resonant hollow beam sensor comprising a closed cantilevered hollow cavity beam element having top, bottom, closed end and at least two side walls joined from at least two substrate pieces and a base structure to which said resonant hollow cavity beam element is attached, said base structure including a sealed, fluid-communicating passageway between said resonant hollow beam element cavity and an outside surface of said base structure, and in which said resonant hollow cavity beam element is less than 10^-1 meters wide, less than 6×

10^-1 meters long, less than 4×

10^-3 meters thick, and the beam wall thicknesses are less than 2×

10^-4 meters thick.

22. The sensor of claim 21 in which the resonant hollow cavity beam element is less than about 10^-3 meters wide, less than about 10^-3 meters long, less than about 3×

10^-5 meters thick, and has a wall thickness of less than about 6×

10^-5 meters.

23. The sensor of claim 21 in which the base structure is formed of silicon.

24. The sensor of claim 21 in which the hollow cavity beam is formed of first and second portions and said base structure is formed of first and second base structure portions, said first beam portion and said first base portion being unitary, and said second beam portion and said second base portion being unitary.

25. The sensor of claim 21 in which the hollow beam cavity has been formed from silicon-base material doped to create an etch-stop layer.

26. The sensor of claim 21 further characterized in that the resonant hollow cavity beam element is curvilinear in cross section.

27. The sensor of claim 21, further characterized in that the resonant hollow cavity beam element is polygonal having at least 3 sides in cross section.

28. The sensor of claim 21, further characterized in that substantially flat, wing elements are formed along at least a portion of the sides of the resonant hollow cavity beam, extending lengthwise from the base structure.

50. The product according to claim 21 further including wing areas adjacent at least a portion of the length of the beam, said wing areas joining the beam horizontally to the base structure.

51. The product according to claim 21 further including a narrow strip area around the periphery of the beam at the juncture of the beam sidewalls where said beam sidewalls are joined from the substrate pieces.

29. In the manufacture of small resonant sensor elements, the method of manufacturing resonant hollow microstructural beam sensors comprising:

(a) etching a trough in the front face surface of a first substrate;

(b) etching a complementary-image trough in the front face surface of a second substrate;

(c) depositing a conformal metallization layer over the respective substrate front face surface areas of the first and second substrates, including the trough surfaces;

(d) removing from the front face surface of each of the substrates a window area in the metallization layer adjacent each side of said trough;

(e) aligning the first and second substrates in precise registration with their respective metallized front face surfaces;

(f) bonding said metallized substrate surfaces together; and

(g) etching sufficient unmetallized substrate surface areas from the metallized substrate region to relieve the metallized portion from the remaining substrate material, and leave a relieved, hollow microstructural cantilever beam.

30. The method of claim 29 including performing the additional step of depositing an etch stop on the reverse face surfaces of the respective substrates prior to step (e) in order to restrict the etching process in relieving the beam.

31. The method of claim 29 in which the substrate material is silicon.

32. The method of claim 29 in which the metal deposited is sintered to form a silicide layer.

33. The method of claim 29 in which the metal deposited is selected from the group consisting of tantalum, tungsten, chromium, molybdenum, nickel, platinum, titanium, beryllium, copper, and aluminum.

34. The method of claim 33 in which the metallization layer is sintered to form a silicide.

35. The method of claim 29 in which the joined substrate front face surfaces are bonded by electromigration.

36. The method of claim 29 in which the joined substrate front face surfaces are bonded by anodic bonding.

37. The method of claim 29 in which each trough is etched to a depth substantially within the range of 4×

10^-7 meters and 2×

10^-3 meters.

38. The method of claim 29 in which each trough is etched to a depth within the range of 5×

10^-6 meters and 2×

10^-5 meters.

39. A resonant hollow microstructural cantilever beam sensor element formed by the process of:

(a) etching a trough in the front face surface of a first substrate;

(b) etching a complementary trough in the front face of a second substrate;

(c) depositing a conformal metallization layer over the substrate front face surface area, including the trough surfaces;

(d) removing from the front face surface of each of the substrates a window area in the metallization layer adjacent each side of said trough;

(e) aligning the first and second substrates in precise registration with their respective front face surfaces thereof joined;

(f) bonding said metallized substrate surfaces together; and

(g) etching sufficient unmetallized substrate surface areas from the metallized substrate region to relieve the metallized portion from the remaining substrate material, and leave a relieved, hollow microstructural cantilever beam.

40. A resonant hollow microstructural cantilever beam sensor element formed by the method of claim 39, and including performing the additional step of depositing an etch stop to the reverse face surfaces of the respective substrates prior to step (e) in order to restrict the etching process in relieving the beam.

41. The product according to claim 39 in which the metallization is sintered to form a silicide.

42. The product according to claim 39 in which the substrate material is silicon.

43. The product according to claim 39 in which the metal deposited is selected from the group consisting of tantalum, tungsten, chromium, molybdenum, nickel, platinum, beryllium, copper, and aluminum.

44. The product according to claim 39 in which the metal deposited is sintered to form a silicide layer.

45. The product according to claim 39 in which the joined front face substrate surfaces are bonded by electromigration.

46. The product according to claim 39 in which the hollow cavity beam element is formed of first and second metal portions and said base structure is formed of first and second base structure portions, said first metal beam portion and said first base portion being joined and said second metal beam portion and said second base portion being joined.

47. The product according to claim 39, further characterized in that the resonant hollow cavity beam element is polygonal having at least three sides.

48. The product according to claim 39, further characterized in that the resonant metal hollow cavity beam element is curvilinear in cross section.

49. The product according to claim 39, further characterized in that flat, integral metallic wing elements are formed along the sides of the resonant metallic hollow cavity beam.

52. A resonant hollow microstructural beam sensor element formed by the process of:

(a) etching a trough in the front face surface of a first substrate;

(b) etching a complementary-image trough in the front face surface of a second substrate;

(c) depositing a conformal organic polymer layer over the substrate front surface area, including the trough surfaces;

(d) removing from the front face surface of each of the substrates a window area in the polymer layer adjacent each side of said trough;

(e) aligning the first and second substrates in precise registration with their respective front face surfaces joined;

(f) bonding said organic polymer substrate surfaces together; and

(g) etching sufficient substrate surface areas from the substrate region to relieve the organic polymer portion from the remaining substrate material, and leave a relieved, hollow microstructural cantilever beam.

53. The product according to the method of claim 52 wherein said polymer layer is a high molecular weight polymer.

54. A resonant hollow microstructural cantilever beam sensor element formed by the method of claim 52 and including performing the additional step of depositing an etch stop to the reverse face surface of the respective substrates prior to step (f) in order to restrict the etching process in relieving the beam.