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Electromagnetic radiation detectors

  • US 4,614,957 A
  • Filed: 12/04/1984
  • Issued: 09/30/1986
  • Est. Priority Date: 03/31/1982
  • Status: Expired due to Fees
First Claim
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1. A photoconductive semiconductor device comprising:

  • a substrate;

    a first layer of electromagnetic radiation sensitive semiconductor material of a given conductivity type and having a first energy bandgap on said substrate;

    a first region of a second layer of semiconductor material of the same conductivity type as said first layer of semiconductor material, but having a second energy bandgap greater than said first bandgap, and in electrical contact with said first layer; and

    a first ohmic contact means on and in electrical communication with said region of said second layer of semiconductor material and adapted to be connected to a first conductor of an external source of electrical voltage in a manner such that said first ohmic contact will attract minority carriers;

    a second ohmic contact means on and in electrical communication with either said first or said second layer of semiconductor material and adapted to be connected to a second conductor of said external source of electrical voltage of opposite polarity to said first contact of said external source of electrical voltage; and

    wherein said first and second ohmic contact means on said semiconductor material are spaced from each other a sufficient distance such that external electromagnetic radiation may be sensed in the space therebetween.

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