Method of manufacturing semiconductor device having a pressure sensor

• US 4,618,397 A
• Filed: 11/27/1985
• Issued: 10/21/1986
• Est. Priority Date: 12/24/1982
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Shimizu, Isao, Yamada, Kazuji
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/802,431
• Time in Patent Office: 328 Days
• Field of Search: 29/610 SG, 29/580, 156/628, 156/647, 156/657, 156/659.1, 156/662, 148/1.5, 148/187, 148/190, 148/175, 357/26, 357/91, 338/2, 338/4, 73/719, 73/720, 73/721
• US Class Current: 438/53
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0742 Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure
• CPC Class Codes: Y10S 438/924 To facilitate selective etching
• CPC Class Codes: Y10S 438/97 Specified etch stop material
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate
• CPC Class Codes: Y10T 29/49103 Strain gauge making

Abstract

The present invention relates to a semiconductor device having a semiconductor pressure sensor, which includes a heavily-doped semiconductor layer having a predetermined impurity concentration gradient and formed at the bottom of a diaphragm (membrane portion). Owing to the presence of this semiconductor layer, a flat diaphragm is formed, and a semiconductor pressure sensor of high precision is provided.

Claims

1. In a method of manufacturing a semiconductor device wherein diffused resistors for a pressure sensor are formed in a front surface of a semiconductor crystal body, a rear surface of which is thereafter etched partly so as to put a part of the body into a membrane portion;

a method of manufacturing a semiconductor device having a pressure sensor characterized in that, in advance of the etching step, a buried layer which has an impurity concentration higher than that of the semiconductor body and which has the gradient of the impurity concentration is provided in said semiconductor body, whereupon said body is partly etched from its rear surface while an etching rate is being controlled by the high concentration buried layer.

2. A method of manufacturing a semiconductor device having a pressure sensor as defined in claim 1, wherein said semiconductor crystal body has the (100) plane.

3. A method of manufacturing a semiconductor device having a pressure sensor as defined in claim 2, wherein said etching step is performed by anisotropic etching with an alkali etchant.

4. A method of manufacturing a semiconductor device having a pressure sensor as defined in claim 1, wherein said semiconductor body consists of a p-type silicon substrate on which an n-type silicon layer is epitaxially grown, and said high concentration impurity buried layer is an n⁺ -type buried layer which is formed in a selected part of a front surface of said silicon substrate before the growth of said silicon layer.

5. A method of manufacturing a semiconductor device having a pressure sensor as defined in claim 4, wherein the impurity concentration of said n⁺ -type buried layer has a peak value of at least 10¹⁹ atoms/cm³.

6. A method of manufacturing a semiconductor device having a pressure sensor and at least one active element, comprising the steps of:

(1) preparing a first conductivity type semiconductor substrate which has first and second major surfaces;

(2) introducing a first conductivity type impurity into selected parts of said first major surface, to form first and second buried layers which are isolated from each other;

(3) introducing a second conductivity type impurity into selected parts of said first major surface, to form a third buried layer which overlies said first buried layer and which is broader than said first buried layer and a fourth buried layer which is spaced from said third buried layer;

(4) forming a second conductivity type semiconductor layer on said first major surface by epitaxial growth;

(5) introducing the first conductivity type impurity into the selected part of the front surface of said semiconductor layer, to form an isolation semiconductor region which reaches said second buried layer;

(6) introducing the first conductivity type impurity into selected parts of the major surface of said semiconductor layer which is surrounded with said first semiconductor region and which is located over said first buried layer, to form a plurality of semiconductor resistor layers which are used as said pressure sensor;

(7) introducing the first conductivity type impurity into selected parts of said major surface of said semiconductor layer which is located over said fourth buried layer, to form semiconductor regions which are used as said active element;

(8) forming metal wiring layers which are connected to said semiconductor resistor layers and the active element semiconductor regions; and

(9) etching said semiconductor substrate selectively from said second major surface so as to reach said first buried layer, to form a diaphragm.

7. A method of manufacturing a semiconductor device having a pressure sensor and at least one active element, as defined in claim 6, wherein said semiconductor substrate has the (100) plane, and said step (9) is anisotropic etching with an alkali etchant.

8. A method of manufacturing a semiconductor device having a pressure sensor and at least one active element, as defined in claim 6, wherein before said step (9), said first buried layer is formed so as to have a peak value of at least 10¹⁹ atoms/cm³ as its impurity concentration.

9. A method of manufacturing a semiconductor device having a pressure sensor and at least one active element, as defined in claim 7, wherein before said step (9), siad first buried layer is formed so as to have a peak value of at least 10¹⁹ atoms/cm³ as its impurity concentration.