Semiconductor pressure transducer

• US 4,618,844 A
• Filed: 05/12/1983
• Issued: 10/21/1986
• Est. Priority Date: 05/14/1982
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Takahashi, Yukio, Matsuoka, Yoshitaka, Shimazoe, Michitaka
• Primary Examiner(s): Albritton, Clarence L.
• Assistant Examiner(s): Lateef, M. M.
• Application Number:
  US06/494,075
• Time in Patent Office: 1,258 Days
• Field of Search: 338/2-4, 338/42, 338/36, 338/5, 357/26, 73/777, 73/774, 73/727
• US Class Current: 338/2
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm

Abstract

In a semiconductor pressure transducer in accordance with the present invention, an oxide film is formed on a semiconductor base having a strain gauge resistor element for the purpose of protecting the strain gauge resistor element. Over the oxide film, a conductive metal film is formed which does not overlap with the strain gauge resistor element through said oxide film.

Claims

1. A semiconductor pressure transducer comprising:

a base comprising a semiconductor monocrystal;

a strain gauge resistor element formed on said base;

an oxide film formed on said base in contact with said strain gauge resistor element for protecting said strain gauge resistor element; and

a conductive layer formed on said oxide film, said layer not overlapping said strain gauge resistor element through said oxide film, being adjacent two opposed sides of said strain gauge element and functioning to cause movable ions within and on the oxide film in proximity to the strain gauge resistor element to be fixed.

2. A semiconductor pressure transducer according to claim 1, wherein the two opposed sides of said strain gauge resistor element extend along a longitudinal direction and said conductive layer comprises two conductive films provided adjacent to both sides of said strain gauge resistor element along its longitudinal direction.

3. A semiconductor pressure transducer according to claim 1, wherein said conductive layer is made of aluminium.

4. A semiconductor pressure transducer according to claim 1, wherein the length of said conductive layer is 0.6 to 0.8 the length of said strain gauge resistor element.

5. A semiconductor pressure transducer according to claim 1, wherein said base has a (100) surface and said strain gauge resistor element is arranged in parallel with a <

110>

axis.

6. A semiconductor pressure transducer according to claim 2, wherein said conductive films provided on both sides of said strain gauge resistor element are coupled to each other by an electrical connection means which is so positioned on said oxide film and crosses said strain gauge resistor element over said oxide film.

7. A semiconductor pressure transducer according to claim 6, said electrical connection means is thinner than said conductive films.

8. A semiconductor pressure transducer comprising:

a base comprising a n-type silicon monocrystal having a thin strain causing portion on a central part and a thick fixed portion on an exterior periphery;

a p-type strain gauge resistor element formed in said strain causing portion;

an oxide film formed on said base in contact with said strain gauge resistor element for protecting said strain gauge resistor element;

aluminum wiring formed on said oxide film for outputting the output of said strain gauge resistor element; and

a conductive layer formed on said oxide film, said layer not overlapping said strain gauge resistor element through said oxide film, being adjacent two opposed sides of said strain gauge resistor element and functioning to cause movable ions within and on the oxide film in proximity to the strain gauge resistor element to be fixed.

9. A semiconductor pressure transducer according to claim 8, wherein said base has a (100) surface and said strain gauge resistor element is arranged in parallel with the <

110>

axis and near said fixed portion.

10. A semiconductor pressure transducer according to claim 8 wherein the two opposed sides of said strain gauge resistor element extend along its longitudinal direction and said conductive layer comprises two conductive films provided adjacent to both sides of said strain engage resistor element along its longitudinal direction.

11. A semiconductor pressure transducer according to claim 8, wherein said conductive layer is made of aluminium.

12. A semiconductor pressure transducer according to claim 8, wherein the length of said conductive layer is 0.6 to 0.8 the length of said strain gauge resistor element.

13. A semiconductor pressure transducer according to claim 8, wherein said base has a (100) surface and said strain gauge resistor element is arranged in parallel with a <

110>

axis.

14. A semiconductor pressure transducer according to claim 10, wherein said conductive films provided on both sides of said strain gauge resistor element are coupled to each other by an electrical connection means which is so positioned on said oxide film and crosses said strain gauge resistor element over said oxide film.

15. A semiconductor pressure transducer according to claim 14, wherein electrical connection means is thinner than said conductive films.