Semiconductor device for converting light into electric energy

• US 4,620,058 A
• Filed: 09/19/1980
• Issued: 10/28/1986
• Est. Priority Date: 09/21/1979
• Status: Expired due to Term

• Current Assignee: Total Energie Developpement + Messerschmitt-Bolkow-Blohm GmbH & Company
• Original Assignee: Messerschmitt-Bolkow-Blohm
• Inventors: Winterling, Gerhard, Koniger, Max
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/188,725
• Time in Patent Office: 2,230 Days
• Field of Search: 136/255, 136/256, 136/258 PC, 136/258 AM, 357/2, 357/30
• US Class Current: 136/258
• CPC Class Codes: H01L 31/03921 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/075 the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells

Abstract

A semiconductor device for converting light into electric energy comprises at least one layer of amorphous silicon with a surface thereof which is intended to be exposed to light covered by a cover layer of polycrystalline silicon. The use of the polycrystalline silicon increases the current yield in the blue light range of the solar spectrum. A method of producing such a semiconductor device is also disclosed.

Claims

1. A semiconductor device for the conversion of incident solar radiation into electrical energy, comprising an amorphous silicon body having a surface to be exposed to the incident radiation, and a cover layer or doped semiconductor material which is arranged on the surface of the amorphous silicon body to be exposed to incident radiation, the amorphous silicon body being one of relatively slightly doped, oppositely doped, or intrinsic amorphous silicon adjacent its surface to be exposed and forming with the cover layer, a heterotransition zone, the cover layer consisting of a polycrystalline silicon layer obtained by deposition from a gaseous phase comprising a silicon containing gas and having a thickness of 0.15 micron at most and an average grain size parallel to the surface which is larger than said thickness by a factor of about two, resulting directly from the deposition process, whereby even the blue-violet part of solar radiation is absorbed by the amorphous silicon body adjacent its incident surface, thereby increasing the efficiency of conversion of the solar radiation into electrical energy.

2. A semiconductor device according to claim 1, wherein the cover layer of polycrystalline silicon is substantially thinner than the amorphous silicon body, the cover layer having a thickness of about 0.03 to 0.15 micron.

3. A semiconductor device according to claim 1, further including a semiconductor antireflex layer over said cover layer of polycrystalline silicon, a layer of transparent glass over said antireflex layer and at least one metal electrode embedded in said antireflex layer.

4. A semiconductor device according to claim 3, including a semitransparent metal film layer between said antireflex layer and said polycrystalline silicon cover layer, said polycrystalline cover layer being nearly doped, said amorphous silicon body being intrinsic or slightly doped and including a heavily doped portion on the side of said amorphous silicon body away from said polycrystalline silicon with a metal electrode on said heavily doped amorphous silicon portion.

5. A semiconductor device according to claim 3, further including a semitransparent metal film layer between said antireflex layer and said polycrystalline silicon cover layer, said polycrystalline layer being heavily doped, said amorphous silicon body being either of oppositely doped or intrinsic amorphous silicon having a doping gradient, with a metal electrode connected to said amorphous silicon body.

6. A semiconductor device according to claim 1, including a semiconductor antireflex layer over said cover layer of polycrystalline silicon, a layer of adhesive on said antireflex layer, a transparent glass layer on said layer of adhesive, and at least one metal electrode embedded in said antireflex layer, said amorphous silicon body having a slightly doped portion adjacent said polycrystalline silicon cover layer and a heavily doped portion spaced from said polycrystalline silicon cover layer.

7. A semiconductor device according to claim 6, further including a thin metal film contacting said heavily doped portion of said amorphous silicon body and a metal substrate contacting the other side of said thin metal film.