Method of forming a data storage medium and data storage device by congruent sublimation

• US 4,621,032 A
• Filed: 07/29/1985
• Issued: 11/04/1986
• Est. Priority Date: 07/29/1985
• Status: Expired due to Term

• Current Assignee: Energy Conversion Devices
• Original Assignee: Energy Conversion Devices
• Inventors: Strand, David A., deNeufville, John P.
• Primary Examiner(s): Childs, Sadie L.
• Application Number:
  US06/760,226
• Time in Patent Office: 463 Days
• Field of Search: 427/248.1, 427/255.2, 427/255.3, 427/255.5, 427/162, 428/65, 428/688, 428/689, 428/698, 428/702, 428/704, 428/938, 428/913
• US Class Current: 428/688
• CPC Class Codes: G11B 2007/24316 group 16 elements (i.e. chalcogenides, Se, Te)
• CPC Class Codes: G11B 7/243 comprising inorganic materials only, e.g. ablative layers
• CPC Class Codes: G11B 7/266 Sputtering or spin-coating layers sputtering in general C23C14/24; spin-coating in general B05D1/005
• CPC Class Codes: Y10S 428/913 Material designed to be responsive to temperature, light, moisture
• CPC Class Codes: Y10S 428/938 Vapor deposition or gas diffusion

Abstract

Disclosed is an optical data storage device and a method of making the device. The device has a thin film of a multi-component, phase changeable, chalcogenide material. The thin film is prepared by vacuum deposition of a substantially non-convecting, multi-component, chalcogenide containing first source. The multicomponent source is converted to a non-condensed state, and the non-condensed material is deposited onto the substrate to form a deposit having substantial source/deposit compositional equivalence and the substantial absence of concentration gradients.

Claims

1. A method of depositing a multi-component, phase changeable, chalcogenide material onto a substrate, comprising the steps of:

a. providing in a vacuum deposition means a substantially non-convecting, multi-component, congruently vaporizing chalcogenide first source;

b. converting the first source to a non-condensed state having substantial source/non-condensed state compositional equivalence; and

c. depositing material from the non-condensed state onto the substrate to form a deposit having substantial non-condensed state/deposit compositional equivalence and the substantial absence of concentration gradients.

2. The method of claim 1 wherein the first source is a solid source.

3. The method of claim 1 wherein the first source is a liquid source.

4. The method of claim 1 wherein the chalcogenide first source comprises tellurium.

5. The method of claim 1 comprising providing a chalcogen second source.

6. The method of claim 5 wherein the chalcogen second source comprises tellurium.

7. The method of claim 5 comprising providing an oxide third source.

8. The method of claim 7 wherein the oxide third source comprises tellurium oxide.

9. The method of claim 7 wherein the oxide third source comprises germanium oxide.

10. The method of claim 9 wherein the oxide third source comprises Ge and GeO₂.

11. The method of claim 1 wherein the congruently vaporizing chalcogenide first source comprises tellurium and a component chosen from the group consisting of germanium, tin, lead and mixtures thereof.

12. The method of claim 11 wherein the congruently vaporizing chalcogenide first source comprises germanium telluride and tin telluride.

13. The method of claim 12 wherein the congruently vaporizing chalcogenide first source comprises (Ge_x Sn_1-x) Te where x is from 0.0 to 1.0.

14. An optical data storage device having a layer of a multicomponent, phase changeable, chalcogenide material on a substrate, said layer being deposited by the method comprising:

a. providing in a vacuum deposition means a substantially non-convecting, multi-component, congruently vaporizing chalcogenide first source,

b. converting the chalcogenide first source to a non-condensed state having substantial source/non-condensed state compositional equivalence; and

c. depositing material from the non-condensed state onto the substrate to form a deposit having substantial non-condensed state/deposit compositional equivalence and the substantial absence of concentration gradients.

15. The optical data storage device of claim 14 wherein the congruently vaporizing chalcogenide first source comprises tellurium.

16. The optical data storage device of claim 14 wherein the congruently vaporizing chalcogenide first source comprises tellurium and a component chosen from the group consisting of germanium, tin, lead, and mixtures thereof.

17. The optical data storage device of claim 16 wherein the congruently vaporizing chalcogenide first source comprises germanium telluride and tin telluride.

18. The optical data storage device of claim 17 wherein the congruently vaporizing chalcogenide first source comprises (Ge_x Sn_1-x) Te where x is from 0.0 to 1.0.

19. The optical data storage device of claim 14 comprising providing a chalcogen second source.

20. The optical data storage device of claim 19 wherein the chalcogen is tellurium.

21. The optical data storage device of claim 19 comprising providing an oxide containing third source in the vacuum deposition means.

22. The optical data storage device of claim 21 wherein the oxide containing third source comprises germanium oxide.

23. The optical data storage device of claim 14 wherein the layer of multicomponent, phase changeable, chalcognide material comprises tellurium, germanium, and tin.

24. The optical data storage device of claim 14 wherein the layer of multicomponent, phase changeable, chalcogenide material is a thin film.

25. The optical data storage device of claim 24 wherein the thin film layer of multicomponent, phase changeable, chalcogenide material is from about 50 to about 2,000 Angstroms thick.