Sensor with polycrystalline silicon resistors

• US 4,622,856 A
• Filed: 05/25/1984
• Issued: 11/18/1986
• Est. Priority Date: 05/30/1983
• Status: Expired due to Fees

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Mollmer, Frank, Cutter, David, Schaber, Hans-Christian, Reichert, Hansjorg, Henning, Wolfgang, Binder, Josef
• Primary Examiner(s): WOODIEL, DONALD
• Application Number:
  US06/614,265
• Time in Patent Office: 907 Days
• Field of Search: 73/727, 73/721, 73/DIG. 4, 338/195, 338/4, 338/9, 29/610 SG, 29/593, 29/25.35
• US Class Current: 73/727
• CPC Class Codes: G01L 1/2262 involving simple electrical bridges
• CPC Class Codes: G01L 1/2293 of the semi-conductor type semi-conductor devices controllable by variations of applied mechanical force H01L29/84
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm
• CPC Class Codes: Y10S 73/04 Piezoelectric
• CPC Class Codes: Y10T 29/49004 including measuring or testing of device or component part
• CPC Class Codes: Y10T 29/49103 Strain gauge making

Abstract

Sensor with polycrystalline silicon resistors which are applied to a substrate and are covered with a dielectric passivating layer, characterized by the feature that the resistors are thermally adapted by targeted adjustment of their dopings and by suitable healing, and are balanced by laser trimming.

Claims

1. Sensor with polycrystalline silicon resistors which are applied to a substrate and are covered with a dielectric passivating layer, in which temperature coefficients and resistance values of the resistors are adjusted and equalized by laser trimming, by doping the resistors and by healing with partial recrystallization of the resistors by laser healing with application of laser radiation or oven healing.

2. Sensor according to claim 1, wherein resistors which are adjusted by laser healing by application of laser radiation, the thickness d of the passivating layer is ##EQU11## where λ

vac is the wavelength of the laser radiation used in a vacuum, i is zero or a natural number, and n₁ is the index of refraction of the passivating layer, whereby optimum input coupling of the laser radiation is assured.

3. Sensor according to claim 2, wherein the substrate contains underneath the polycrystalline silicon resistors, at least one insulating layer provided with optimum reflection conditions, of the thickness ##EQU12## where λ

vac is the wavelength of laser radiation used in a vacuum, i is zero or a natural number, and n₂ the index of refraction of the insulating layer.

4. Sensor according to claim 2, wherein the resistors are piezoresistive and are arranged in a bridge circuit, to form a pressure measuring device.

5. Sensor according to claim 2, wherein the resistors form a temperature sensor or a position sensor.

6. Sensor according to claim 1, wherein the substrate contains underneath the polycrystalline silicon resistors, at least one insulating layer provided with optimum reflection conditions, of the thickness ##EQU13## where λ

vac is the wavelength of laser radiation used in a vacuum, i is zero or a natural number, and n₂ the index of refraction of the insulating layer.

7. Sensor according to claim 6, wherein the resistors are piezoresistive and are arranged in a bridge circuit, to form a pressure measuring device.

8. Sensor according to claim 6, wherein the resistors form a temperature sensor or a position sensor.

9. Sensor according to claim 1, wherein the resistors are piezoresistive and are arranged in a bridge circuit, to form a pressure measuring device.

10. Sensor according to claim 9, wherein the resistors form additionally compensating resistors of the bridge circuit, which bring about a compensation of the temperature coefficient of the offset of the bridge.

11. Sensor according to claim 9, including an operational amplifier following the bridge, and wherein polycrystalline resistors are connected between the bridge and the operational amplifier.

12. Sensor according to claim 1, wherein the resistors form a temperature sensor or a position sensor.

13. Sensor according to claim 1, wherein the doping concentration of the resistors has the value 2·

10²⁰ cm^-3.

14. Sensor according to claim 1, wherein the resistors are arranged in a bridge circuit to form a measuring device.

15. Sensor with polycrystalline silicon resistors which are applied to a substrate and are covered with a dielectric passivating layer, in which temperature coefficients and resistance values of the resistors are adjusted and equalized by laser trimming, by doping the resistors and by healing with partial recrystallization of the resistors by laser healing with application of laser radiation or oven healing, wherein the resistors are piezoresistive and are arranged in a bridge circuit, to form a pressure measuring device, wherein the resistors form additionally balancing resistors which have the same doping as the piezoresistive resistors to bring about compensation of the temperature coefficient of the bridge.

16. Sensor according to claim 15, wherein the piezoresistive resistors and the balancing resistors are doped to give a zero value for the temperature coefficient.

17. Sensor according to claim 16, wherein the doping concentration of the resistors is between 10¹⁸ and 10¹⁹ cm^-3.

18. Sensor according to claim 17, wherein the doping is carried out with a doping material selected from the group consisting of boron, arsenic and phosphorous.

19. Sensor according to claim 16, wherein the doping is carried out with a doping material selected from the group consisting of boron, arsenic and phosphorous.

20. Sensor according to claim 15, wherein the doping is carried out with a doping material selected from the group consisting of boron, arsenic and phosphorous.

21. Sensor with polycrystalline silicon resistors which are applied to a substrate and are covered with a dielectric passivating layer, in which temperature coefficients and resistance values of the resistors are adjusted and equalized by laser trimming, by doping the resistors and by healing with partial recrystallization of the resistors by laser healing with application of laser radiation or oven healing wherein the resistors are piezoresistive and are arranged in a bridge circuit, to form a pressure measuring device, wherein the piezoresistive resistors are doped to give a zero value temperature dependence of their sensitivity.

22. Method for manufacturing a sensor with polycrystalline silicon resistors which comprises

(a) depositing a n-silicon layer epitaxially on an n⁺ -silicon substrate,

(b) placing p-doped bridge resistors R_b which form the sensor, into the n-silicon layer by means of phototechniques,

(c) applying a silicon dioxide layer to the entire semiconductor substrate over the entire surface,

(d) reducing the applied silicon dioxide layer in the region of the bridge resistors (R_b) to a smaller layer thickness by means of a phototechnique,

(e) thereupon, depositing a thin silicon nitride layer over the entire surface,

(f) applying amorphous silicon to the silicon nitride layer over the entire surface,

(g) doping parts of the applied amorphous silicon layer to obtain one and maximally two doping concentrations,

(h) depositing a passivating layer in a predetermined layer thickness over the entire surface of the entire semiconductor wafer,

(i) performing laser healing of certain regions of the amorphous silicon layer wherein the laser illuminates the regions line by line,

(j) performing oven-healing of the entire semiconductor wafer,

(k) structuring the amorphous silicon layer, whereby different polysilicon resistors (R_K) and (R_K'"'"') are formed,

(l) performing a new passivation operation,

(m) reducing the silicon substrate at the place of the bridge resistors (R_b) by means of etching on the back side, and

(n) subjecting the polysilicon resistors (R_K and R_K'"'"') to a fine adjustment by means of laser trimming.

23. Method for manufacturing a sensor with polycrystalline silicon resistors which comprises

(a) depositing a n-silicon layer epitaxially on an n⁺ -silicon substrate,

(b) applying a silicon dioxide layer to the entire semiconductor substrate over the entire surface,

(c) optionally, depositing a thin silicon nitride layer thereon over the entire surface,

(d) applying amorphous silicon over the entire surface on the silicon nitride layer or silicon oxide layer,

(e) doping parts of the applied amorphous silicon layer to obtain one and maximally two different doping concentration,

(f) subsequently, performing laser healing of regions of the amorphous silicon layer wherein the laser illuminates the regions line by line,

(g) performing oven-heating of the entire semiconductor wafer,

(h) structuring the amorphous silicon layer, whereby different polysilicon resistors together with the bridge resistors are produced as pressure sensors,

(i) performing a new passivation operation,

(j) reducing the thickness of the substrate layer at the location of the bridge resistors (R_b) by means of etching on the back side, and

(k) subjecting the polycrystalline silicon resistors to a fine adjustment by means of laser trimming.