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Continuous gas plasma etching apparatus and method

  • US 4,624,738 A
  • Filed: 07/12/1985
  • Issued: 11/25/1986
  • Est. Priority Date: 07/12/1985
  • Status: Expired due to Fees
First Claim
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1. Apparatus for continuous plasma etching of generally planar workpieces, said apparatus comprising:

  • a substantially airtight enclosed processing chamber;

    means for substantially evacuating said processing chamber;

    means for introducing predetermined types and quantities of gases into said processing chamber;

    means for introducing workpieces into said processing chamber while maintaining substantial evacuation of said processing chamber;

    means for supporting and moving said workpieces along a predetermined path within said processing chamber;

    means for generating within said processing chamber an electrically charged plasma such that said plasma substantially surrounds said workpieces while maintaining said workpieces within an electrically neutral field; and

    means for removing workpieces from said processing chamber while maintaining substantial evacuation of said processing chamber.

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