Optically triggered bulk device Gunn oscillator

• US 4,625,182 A
• Filed: 10/28/1985
• Issued: 11/25/1986
• Est. Priority Date: 10/28/1985
• Status: Expired due to Fees

• Current Assignee: The United States of America As Represented By The Secretary of Agriculture
• Original Assignee: The United States Of America As Represented By The Secretary Of The Army
• Inventors: Weiner, Maurice, Bovino, Lawrence J., Burke, Terence
• Primary Examiner(s): Grimm, Siegfried H.
• Application Number:
  US06/791,672
• Time in Patent Office: 393 Days
• Field of Search: 331/66, 331/107 G, 331/107 DP, 357/3, 357/30, 307/311
• US Class Current: 331/107.00G
• CPC Class Codes: H03B 9/12 using solid state devices, e.g. Gunn-effect devices

Abstract

A high power solid state source of microwave and millimeter wave signals is provided by an optically triggered body of bulk semiconductor material selected from the Group III-V compounds including GaAs, Cr:GaAs, and Fe:InP and having a relatively long gap length which is in the order of 0.5 to 10.0 mm as well as having a resistivity which is greater than 1×10⁷ ohm-cm. The device is further dc biased to a field of between 15 kV/cm and 35 kV/cm. Under such conditions, a very low dc current flows without any oscillatory behavior; however, illumination of the semiconductor body with a fast rising optical pulse having a wavelength suitable for carrier generation causes electrons to be lifted to the conduction band which is accompanied by a rapid reduction of the resistivity. At the same time, the electric field across the gap length decreases to a value just above the oscillation threshold whereupon high power RF oscillations are generated whose frequency is a function of the recombination time of the excited carriers.

Claims

1. A microwave/millimeter wave signal generator comprising:

a Gunn effect device comprised of material having an electrical resistivity greater than 1×

10⁷ ohm/cm and including a pair of ohmic contacts formed on the terminal ends thereof with the distance between said contacts defining a gap having a gap length of at least 0.5 millimeters;

means for applying a relatively high bias potential across said device for generating an electrical field thereacross which is substantially beyond the oscillation threshold of said device but wherein oscillations are inhibited in absence of optical energy impinging thereon due to the extremely high resistivity of the material of said device;

an optical source for periodically illuminating said device whereupon carriers are generated across said gap causing a reduction of the resistivity of the device which is accompanied by a decrease of the electrical field across the device to the oscillation threshold level, whereupon relatively high power RF oscillations appear across said ohmic contacts and whose frequency is determined by the recombination time of the carriers generated in said material by said optical source; and

means coupled across said ohmic contacts for sensing said RF oscillations.

2. The microwave signal generator as defined by claim 1 wherein said material comprising said Gunn effect device comprises Group III-V bulk semiconductor material.

3. The microwave signal generator as defined by claim 2 wherein said Group III-V semiconductor material comprises a body of gallium arsenide (GaAs) or chromium doped gallium arsenide (Cr:

GaAs).

4. The microwave signal generator as defined by claim 2 wherein said Group III-V semiconductor material comprises a body of iron doped indium phosphide (Fe:

InP).

5. The microwave signal generator as defined by claim 2 wherein said gap length is in the range of between 0.5 and 10.0 millimeters.

6. The microwave signal generator as defined by claim 5 wherein said means for applying a relatively high bias potential comprises means for generating an electric field of between 15 kV/cm and 35 kV/cm across said device.

7. The microwave signal generator as defined by claim 6 wherein the resistivity of said material comprising the Gunn effect device ranges between 1×

10⁷ ohm/cm and 6×

10⁷ ohm/cm.

8. The microwave signal generator as defined by claim 2 wherein said optical source comprises a laser generating an optical signal having a wavelength which is adapted to free electrons in the conduction band of said bulk semiconductor material.

9. The microwave signal generator as defined by claim 8 wherein said laser comprises a pulse type laser.

10. The microwave signal generator as defined by claim 8 wherein said laser comprises an Nd:

YAG laser.

11. The microwave signal generator as defined by claim 2 and additionally including a pulse forming network coupled between said Gunn effect device and said means for applying said bias potential, said pulse forming network being operable to aid the delivery of current to said device from said means for applying said bias potential when RF oscillations are being generated.

12. The microwave signal generator as defined by claim 2 wherein said means for applying a relatively high bias potential comprises a high voltage dc power supply.