Forming electrical conductors in long microdiameter holes

• US 4,628,174 A
• Filed: 09/17/1984
• Issued: 12/09/1986
• Est. Priority Date: 09/17/1984
• Status: Expired due to Term

• Current Assignee: Intersil Corporation (Renesas Electronics Corporation)
• Original Assignee: General Electric Company
• Inventors: Anthony, Thomas R.
• Primary Examiner(s): Shaw, Clifford C.
• Application Number:
  US06/651,014
• Time in Patent Office: 813 Days
• Field of Search: 219/76.13, 219/76.1, 118/620, 118/638, 427/12, 427/37, 427/97
• US Class Current: 219/76.13
• CPC Class Codes: H01B 13/0026 Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
• CPC Class Codes: H05K 3/4076 by thin-film techniques

Abstract

A conductor is provided through a narrow bore hole of a wafer. The hole has a length-to-diameter ratio in excess of six. The conductor is formed by condensation of metal vapor generated at the bottom of said hole by a spark. The spark is generated between a vaporizable metal at the bottom of the hole and a thin electrode disposed above the hole from a conventional automobile coil and battery operating through a mercury switch.

Claims

1. A method of forming a through conductor in a small bore hole through a wafer having a length to diameter ratio in excess of six which comprises

disposing a vaporizable metal at the bottom of said hole,

disposing a thin electrode over the top of the hole, and

creating a spark between the metal and electrode to vaporize metal into and through said hole.

2. The method of claim 1 wherein the ratio is in excess of 10.

3. The method of claim 1 wherein the ratio is in excess of 20.

4. The method of claim 1 wherein the metal is copper.