Dual slope, feedback controlled, EEPROM programming

• US 4,628,487 A
• Filed: 08/14/1984
• Issued: 12/09/1986
• Est. Priority Date: 08/14/1984
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Smayling, Michael C.
• Primary Examiner(s): Popek, Joseph A.
• Application Number:
  US06/640,721
• Time in Patent Office: 847 Days
• Field of Search: 365/182, 365/185, 365/218, 365/104, 357/23.5, 357/41
• US Class Current: 365/185.22
• CPC Class Codes: G11C 16/0441 comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
• CPC Class Codes: G11C 16/12 Programming voltage switching circuits
• CPC Class Codes: H01L 29/7883 charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Abstract

A floating-gate, electrically-erasable, programmable read-only memory cell is programmed or erased by a high voltage across a thin oxide area between the floating gate and the substrate. A tunnelling phenomena is produced by the high voltage. In order to protect the thin oxide from excessive stress, yet minimize programming time, the maximum electric field is controlled by a dual-slope waveform for the programming voltage Vpp. The values of slope and breakpoints for this dual-slope Vpp voltage are selected by a feedback arrangement which is responsive to process variations in threshold voltage, supply voltage, etc.

Claims

1. A method of programming a floating gate memory cell of the type having a thin-oxide area between a floating gate and another electrode, comprising the steps of:

applying a voltage to said memory cell to produce an electric field across said thin-oxide area, and increasing said voltage substantially linearly as a function of time at a first rate, abruptly changing the rate of increase of said voltage to a second rate lower than said first rate and then continuing to increase said voltage substantially linearly, then again abruptly ceasing said increase of voltage and thereafter maintaining said voltage constant at a given maximum level for a selected time.

2. A method according to claim 1 wherein said step of changing the rate is in response to reaching a maximum value of electric field across said thin-oxide area.

3. A method according to claim 2 wherein said second rate is selected to maintain a relatively constant electric field across said thin-oxide area.

4. A method according to claim 3 wherein said second rate is less than about one-tenth that of the first rate.

5. A method according to claim 4 wherein said first rate is the maximum permitted by the parasitic capacitance of the circuitry of the device containing the memory cell.

6. A method according to claim 3 wherein said given maximum level is selected based upon measuring said voltage.

7. A method according to claim 2 wherein said step of changing the rate is implemented in response to detecting the voltage across said thin-oxide area.

8. A method according to claim 2 wherein said memory cell includes a memory transistor formed at a face of a semiconductor body and having a control gate, a floating gate and a source-to-drain path, and wherein said floating gate extends to a programming area spaced from said memory area, the thin-oxide area being in said programming area.

9. A method according to claim 8 wherein said control gate extends to said programming area, and said voltage is applied between said control gate and said electrode.

10. A method according to claim 9 wherein said electrode is a region in said face.

11. An electrically-erasable, programmable, semiconductor memory cell comprising:

a control gate, a floating gate and a source-to-drain path at a face of a semiconductor body,

write/erase means at said face including an upper electrode integral with said floating gate, and a lower electrode in said face, with a thin oxide area between the upper and lower electrodes,

means for applying a programming pulse across said thin-oxide area, said pulse including a first substantially linear ramp period of increasing voltage followed by a second substantially linear ramp period of increasing voltage followed by a period of constant voltage, and abruptly changing from the first to the second at a time related to the electric field across said thin-oxide area.

12. A device according to claim 11 wherein the voltage of said pulse during said second ramp period increases at substantially linear rate much greater than that of said first ramp period.

13. A device according to claim 12 wherein said write/erase means includes a conductive layer integral with said control gate and overlying said upper and lower electrodes.

14. A device according to claim 13 wherein said pulse is applied between said conductive layer and said lower electrode, and said lower electrode is a region of said semiconductor body.

15. A device according to claim 14 wherein said floating gate is charged or discharged by tunnelling through said thin-oxide area.

16. A device according to claim 15 including detector means responsive to the electric field across said thin-oxide area, and means for controlling said time of changing from the first to second ramp period in response to said detector means.

17. A device according to claim 16 wherein the rate of change of voltage of said pulse during the second ramp period is no more than about one-tenth that of said pulse during the first ramp period.

18. A device according to claim 17 including means for limiting the maximum value of voltage of said pulse after said second period in response to the field across said thin-oxide area.

19. A device according to claim 16 wherein said detector means is responsive to temperature, supply voltage, and process variations in the threshold voltage of transistors on the semiconductor body.