CVD temperature control
First Claim
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1. A chemical vapor deposition apparatus comprising:
- means for enclosing a volume, said means including a thermally translucent window;
heating means adjacent the outside of said window for radiantly heating an article within said volume;
temperature sensing means within said heating means for detecting the amount of heat produced by said heating means.
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Abstract
Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
20 Citations
8 Claims
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1. A chemical vapor deposition apparatus comprising:
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means for enclosing a volume, said means including a thermally translucent window; heating means adjacent the outside of said window for radiantly heating an article within said volume; temperature sensing means within said heating means for detecting the amount of heat produced by said heating means. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification