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Ion implanter

  • US 4,633,138 A
  • Filed: 08/16/1985
  • Issued: 12/30/1986
  • Est. Priority Date: 09/10/1984
  • Status: Expired due to Term
First Claim
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1. An ion implanter, in which the ion beam is swept in one direction by means of a beam scanner and a carrier, on which a plurality of wafers are mounted along at least one row, is moved in the direction substantially perpendicular to the scanning with the beam along a straight line so that ions are implanted uniformly into each of the wafers, comprising:

  • a beam sweep width control means for controlling the beam sweep width in such a manner that the area scanned with the ion beam by sweeping it coincides substantially with the shape of the wafers in which ions are to be implanted; and

    a carrier speed control means for controlling the carrier speed, depending on the beam sweep width so that the dose of ions implanted in the wafers is uniform.

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