Ion implanter

• US 4,633,138 A
• Filed: 08/16/1985
• Issued: 12/30/1986
• Est. Priority Date: 09/10/1984
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Koike, Hidemi, Sakudo, Noriyuki, Tokiguchi, Katsumi, Okada, Osami
• Primary Examiner(s): Dixon, Harold
• Application Number:
  US06/766,393
• Time in Patent Office: 501 Days
• Field of Search: 250/492.21, 250/492.22, 315/111.81
• US Class Current: 315/111.81
• CPC Class Codes: G21K 5/10 with provision for relative movement of beam source and object to be irradiated
• CPC Class Codes: H01J 37/3171 for ion implantation

Abstract

In order to implant ions uniformly in a plurality of wafers, carriers, on which a plurality of wafers are mounted, are moved along a straight line one after another. An ion implanter comprises a beam sweep width controller for controlling the beam sweep width in such a manner that the area scanned with the ion beam by sweeping it coincides approximately with the shape of the wafers in which ions are to be implanted and a carrier speed controller for controlling the carrier speed, depending on the beam sweep width so that the dose of ions implanted in the wafers is uniform. The beam sweep width controller includes a detector for detecting the width of a wafer in which ions are being implanted in the one direction and a controller for varying the beam sweep width, depending on the width of the wafer thus detected. The carrier speed controller varies the carrier speed inversely proportionally to the width of the wafer thus detected.

Claims

1. An ion implanter, in which the ion beam is swept in one direction by means of a beam scanner and a carrier, on which a plurality of wafers are mounted along at least one row, is moved in the direction substantially perpendicular to the scanning with the beam along a straight line so that ions are implanted uniformly into each of the wafers, comprising:

a beam sweep width control means for controlling the beam sweep width in such a manner that the area scanned with the ion beam by sweeping it coincides substantially with the shape of the wafers in which ions are to be implanted; and

a carrier speed control means for controlling the carrier speed, depending on the beam sweep width so that the dose of ions implanted in the wafers is uniform.

2. An ion implanter according to claim 1, wherein said beam sweep width control means consists of a detector for detecting the width of a wafer, in which ions are being implanted in said one direction, and a control means for varying the beam sweep width by varying the magnetic field intensity of said magnetic type beam scanner, depending on the width of the wafer thus detected.

3. An ion implanter according to claim 2, wherein said carrier speed control means is a speed control means for varying the carrier speed inversely proportionally to the width of the wafer thus detected.

4. An ion implanter according to claim 2, wherein said detector consists of light emitting diodes and photosensitive elements receiving light emitted by said light emitting diodes.