Process for the autopositioning of a local field oxide with respect to an insulating trench

• US 4,636,281 A
• Filed: 06/13/1985
• Issued: 01/13/1987
• Est. Priority Date: 06/14/1984
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Original Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Inventors: Buiguez, Francois, Hartmann, Joel
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/744,339
• Time in Patent Office: 579 Days
• Field of Search: 29/576 W, 29/580, 357/47, 357/49, 357/58, 427/93, 427/94, 156/643, 156/646, 156/648, 156/651, 156/653, 156/657, 156/659.1, 156/661.1, 156/662, 148/DIG. 50, 204/192 E
• US Class Current: 438/426
• CPC Class Codes: H01L 21/763 Polycrystalline semiconductor regions H01L21/76264 takes precedence
• CPC Class Codes: Y10S 148/05 Etch and refill

Abstract

Process for the autopositioning of a local field oxide relative to an insulating trench.

This process consists of forming at least one first insulating coating on a silicon substrate, producing a second insulating coating on the first coating, anisotropically etching the first and second coating until the region of the substrate in which the trench is to be formed is exposed, forming insulating spacers on the etched flanks of the first and second coatings, anisotropically etching the substrate region in order to form the trench, the second etched coating and the spacers used as a mask for said etching, eliminating the mask, forming the insulating edges in the trench, filling said trench with a material and forming the field oxide.

Claims

1. A process for self-positioning a local field oxide with respect to an insulating trench formed in a silicon substrate, comprising the successive steps of:

(a) forming at least one first insulating material coating on the substrate surface;

(b) forming a second insulating material coating on said first coating;

(c) anisotropically etching the first and second insulating material coatings until the region of the substrate in which the trench is to be formed is exposed;

(d) forming insulating spacers on the etched flanks of the first and second insulating material coatings;

(e) anisotropically said region of the substrate in order to produce the trench, the second etched insulating material coating and the spacers acting as a mask for said etching;

(f) eliminating the second etched insulating material coating and the spacers;

(g) forming insulating edges in the trench;

(h) filling the trench with a polycrystalline silicon;

(i) producing the local field oxide with a thermal oxidation of said polycrystalline silicon, the first etched insulating material coating acting as a mask for said thermal oxidation; and

(j) eliminating the first etched insulating material coating.

2. A process according to claim 1, wherein a silicon oxide coating is formed on the substrate surface, followed by a silicon nitride coating on the first coating.

3. A process according to claim 2, wherein the silicon oxide coating is formed by thermal oxidation of the substrate.

4. A process according to claim 2, wherein the silicon nitride coating is formed by deposition.

5. A process according to claim 1, wherein the second insulating material coating is formed from silicon oxide.

6. A process according to claim 1, wherein the second insulating material coating is formed by deposition.

7. A process according to claim 1, wherein, between stages (b) and (c), is formed a resin mask on the second insulating material coating and which is used for defining the location of the trench.

8. A process according to claim 7, wherein the resin mask has an opening having a greater width than that of the trench to be formed.

9. A process according to claim 7, wherein the resin mask is eliminated between stages (c) and (d).

10. A process according to claim 1, wherein insulating spacers are formed by depositing a third insulating coating on the second etched insulating material coating and then by anisotropically etching said third coating.

11. A process according to claim 1, wherein the spacers are made from silicon oxide.

12. A process according to claim 1, wherein the insulating edges of the trench are formed by thermal oxidation of the etched substrate.

13. A process according to claim 1, wherein the trench is filled by isotropic deposition.

14. A process according to claim 13, wherein the excess polycrystalline silicon inside the trench is eliminated, so as to obtain a planar surface.

15. A process according to claim 1, wherein, between stages (d) and (e), there is a slight isotropic etching of the exposed substrate region, the second etched insulating material coating and the spacers used as a mask for said etching.

16. A process according to claim 7, wherein spacers are formed in the etched flanks of the first and second insulating material coatings, as well as on the etched flanks of the exposed substrate region.

17. A process according to claim 7, wherein, between stages (c) and (d), there is a slight anisotropic etching of the exposed substrate region through the resin mask.