IR imaging array and method of making same

• US 4,638,345 A
• Filed: 06/01/1983
• Issued: 01/20/1987
• Est. Priority Date: 06/01/1983
• Status: Expired due to Term

• Current Assignee: RCA Corporation
• Original Assignee: RCA Corporation
• Inventors: Elabd, Hammam, Kosonocky, Walter F.
• Primary Examiner(s): NOT, DEFINED
• Application Number:
  US06/500,187
• Time in Patent Office: 1,329 Days
• Field of Search: 357/24 LR, 357/15, 357/30, 357/52
• US Class Current: 257/451
• CPC Class Codes: H01L 27/14875 Infrared CCD or CID imagers
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type

Abstract

An array of infra-red (IR) detectors for a CCD image sensor includes a plurality of spaced areas of a conductive material at the surface of a substrate of semiconductor material of one conductivity type with each conductive area forming a Schottky-barrier diode with the substrate to form the IR detectors. Each detector includes a high conductivity contact region within the substrate. Between the detector area is a guard band which consists of a region of a conductivity type opposite to that of the substrate within the substrate and around said detector area. The guard band is spaced from the contact regions and each conductive area overlaps a portion of its adjacent guard band.

Claims

1. An array of infra-red detectors comprising

a substrate of single crystal silicon of one conductivity type,

a plurality of spaced apart detector areas of a conductive material at one surface of said substrate with each of said conductive areas forming a Schottky-barrier junction with said substrate,

each conductive area including a conductive coupling region of a conductivity type opposite to that of the substrate within the substrate under and in contact with a portion of the conductive material, and

means between adjacent detector areas isolating said areas from each other, said isolating means consisting of a region of a conductivity type opposite to that of the substrate in said substrate and extending along said one surface between said areas with each of said areas contacting said region, said region extending around the conductive areas and being spaced from the coupling regions.

2. An array in accordance with claim 1 in which each of the conductive areas overlaps a portion of the adjacent isolation region.

3. An array in accordance with claim 1 in which each of said conductive areas is a conductive silicide.

4. An array in accordance with claim 1 in which the periphery of each of the conductive areas overlaps a portion of the isolation region around said conductive area.

5. An array in accordance with claim 4 including a layer of an insulating material over said one surface of the substrate and a reflective metal layer on the insulating layer and over the detector areas.

6. An array in accordance with claim 1 in which the isolation region is a region containing a relatively low amount of conductivity modifier so as to be of relatively high resistance.

7. An array in accordance with claim 6 in which the substrate is of P type conductivity and the isolation region is of N- type conductivity.