Semiconductor devices having a metallic glass substrate

• US 4,639,543 A
• Filed: 03/08/1985
• Issued: 01/27/1987
• Est. Priority Date: 02/04/1985
• Status: Expired due to Fees

• Current Assignee: BIRCH, RICHARD J., (35%) INTEREST
• Original Assignee: Richard J. Birch
• Inventors: Fang, Pao-Hsien
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/709,572
• Time in Patent Office: 690 Days
• Field of Search: 136/256, 136/258 PC, 136/258 AM, 357/2, 357/30, 357/65, 428/620
• US Class Current: 136/256
• CPC Class Codes: H01L 31/0392 including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate textured substrates H01L31/02366
• CPC Class Codes: H01L 31/03921 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/03926 comprising a flexible substrate
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10T 428/12528 Semiconductor component

Abstract

For electronic devices such as solar cells, the substrate is an integral part of the device. The present invention employs metallic glass as the substrate for semiconductor devices. The metallic glass substrate is both morphologically amorphous and electrically conductive. The use of such a substrate permits a morphologically amorphous semiconductor material to be deposited on a morphologically amorphous and electrically conductive substrate. The metallic glass substrate can also be used in other forms of semiconductor devices whose morphological nature does not affect the device processing and the device performance. Thus, either morphologically amorphous or crystalline semiconductor materials can be deposited on the metallic glass substrate to form electronic devices.

Claims

1. An amorphous semiconductor device comprising:

an amorphous and electrically conductive substrate of metallic glass; and

,

at least one amorphous semiconductor layer deposited on said metallic glass substrate.

2. The amorphous semiconductor device of claim 1 wherein said at least one amorphous semiconductor layer is made of silicon or its alloys.

3. The amorphous semiconductor device of claim 2 wherein said metallic glass substrate includes phosphorous or boron as one of its constituents, said phosphorous or boron providing an autodoping source and stabilizer for the deposited, immediately superimposed amorphous semiconductor layer.

4. A crystalline semiconductor device comprising:

an amorphous and electrically conductive substrate of metallic glass; and

,

at least one crystalline semiconductor layer deposited on said metallic glass substrate, said metallic glass substrate including phosphorous or boron as one of its constituents with said phosphorous or boron providing an autodoping source and stabilizing for the deposited, immediately superimposed crystalline semiconductor layer.

5. The crystalline semiconductor device of claim 4 wherein said at least one crystalline semiconductor layer is made of silicon or its alloys.

6. A solar cell comprising:

an amorphous and electrically conductive substrate of metallic glass, said substrate forming one electrode of the solar cell;

at least one amorphous semiconductor layer deposited on said metallic glass substrate; and

,

another electrode in electrically conductive contact with said at least one amorphous semiconductor layer.

7. The solar cell of claim 6 wherein said at least one amorphous semiconductor layer is made of silicon.

8. The solar cell of claim 6 wherein said amorphous semiconductor layer is made of silicon alloyed with its isovalent elements.

9. The solar cell of claims 7 or 8 wherein said metallic glass substrate includes phosphorous or boron as one of its constituents, said phosphorous or boron providing an autodoping souce and stabilizer for the deposited, immediately superimposed amorphous semiconductor layer.

10. A solar cell comprising:

an amorphous and electrically conductive substrate of metallic glass, said substrate forming one electrode of the solar cell;

at least one crystalline semiconductor layer deposited on said metallic glass substrate; and

,

another electrode in electrically conductive contact with said at least one crystalline semiconductor layer, said metallic glass substrate including phosphorous or boron as one of its constituents with said phosphorous or boron providing an autodoping souce and stabilizer for the deposited, immediately superimposed crystalline semiconductor layer.

11. The solar cell of claim 10 wherein said at least one crystalline semiconductor layer is made of silicon.

12. The solar cell of claim 10 wherein said crystalline semiconductor layer is made of silicon alloyed with its isovalent elements.

13. A solar cell comprising:

an amorphous and electrically conductive substrate of metallic glass, said substrate forming one electrode of the solar cell;

at least one semiconductor layer deposited on said metallic glass substrate; and

,

another electrode in electrically conductive contact with said at least one semiconductor layer said metallic glass substrate having one or more constituents of zinc, silicon, and copper, said one or more constituents providing an autodoping source and stabilizer for the deposited, immediately superimposed semiconductor layer.

14. The solar cell of claim 13 wherein said at least one semiconductor layer is made of compound semiconductors chosen from gallium arsenide, cadmium sulfide, and other multi-component compounds.