Tunable, dielectric-resonator-stabilized oscillator and method of tuning same

• US 4,639,690 A
• Filed: 07/05/1985
• Issued: 01/27/1987
• Est. Priority Date: 07/05/1985
• Status: Expired due to Term

• Current Assignee: Litton Systems Incorporated
• Original Assignee: Litton Systems Incorporated
• Inventors: Lewis, Gary K.
• Primary Examiner(s): Grimm, Siegfried H.
• Application Number:
  US06/752,297
• Time in Patent Office: 571 Days
• Field of Search: 331/96, 331/99, 331/107 SL, 331/107 DP, 331/117 D, 331/117 FE, 333/219, 333/227, 333/231, 333/235, 310/312
• US Class Current: 331/96
• CPC Class Codes: H03B 2201/017 the element being a dielectric resonator
• CPC Class Codes: H03B 5/1876 the semiconductor device being a field-effect device
• CPC Class Codes: H03B 7/14 active element being semiconductor device

Abstract

A dielectric-resonator-stabilized, Gallium-Arsenide-FET, negative resistance oscillator operating in the microwave region incorporating an improved form of dielectric resonator whose resonant frequency is tuned by the addition or removal of metal from the surface of a dielectric tuning plate in the resonator, and a method for tuning the oscillator to the desired frequency range with the resonator in place by use of a laser-trimming device are disclosed.

Claims

1. A tunable, frequency-stabilized oscillator, comprising:

a negative resistance oscillator circuit having at least one active element; and

at least one dielectric resonator connected in said oscillator circuit having at least one electrically-conductive area on its surface, the selective variation in size of which alters the resonant frequency of said at least one resonator;

said at least one dielectric resonator further comprising;

a. an electrically conductive resonator housing having a resonating cavity therethrough;

b. a resonator body made of dielectric medium;

c. a resonator body mounting plate of thin, rigid dielectric material mounted at one end of said cavity in said housing to mount said resonator body within said cavity; and

d. a tuning plate of thin, rigid dielectric material mounted at the other end of said cavity from said first-mentioned plate, coated with an electrically conductive material whose areal extent over said plate may be selectively varied, whereby the resonant frequency of said dielectric resonator may be finely tuned.

2. The device as recited in claim 1 wherein said active element of said oscillator circuit is at least one transistor.

3. The device as recited in claim 2 wherein said transistor is a Field Effect Transistor (FET).

4. The device as recited in claim 3 wherein said FET is a Gallium Arsenide (GaAs) FET.

5. The device as recited in claim 1 wherein said at least one resonator is connected to said oscillator circuit by a transmission line.

6. The device as recited in claim 5 wherein said transmission line is a slab-type microstrip.

7. The device as recited in claim 1 wherein said electrically-conductive surface said area of which is selectively varied for tuning said circuit is a metal.

8. The device as recited in claim 7 wherein said metal is selected from the group consisting of gold, silver, platinum, copper, tin, lead, chromium, cadmium, nickel, nickel-cadmium alloy, tin-lead alloy or chrome-gold alloy.

9. The device as recited in claim 1 wherein said cavity has an aperture therein through which electromagnetic energy may be coupled into said cavity and at least one other aperture the area of which may be selectively varied while said resonator is in place within said circuit to vary the resonant frequency of said cavity and said circuit.

10. The device as recited in claim 1 wherein said dielectric resonator body is selected from the group consisting of air, fused silica, fused quartz, silicon dioxide, aluminum dioxide, titanium dioxide, barium tetratitanate, or zirconium-tin titanate.

11. A method for fine-tuning a stabilized oscillator of the type described in claim 1, comprising the steps of:

a. Stabilizing the components of said oscillator at some reference temperature;

b. Adjusting the electrical position of said at least one resonator within said oscillator circuit to a position which achieves sustained oscillation at an output frequency within 50 ppm of a desired frequency at said reference temperature;

c. Fixing said position of said at least one resonator within said oscillator circuit;

d. Comparing said output frequency of said oscillator to said desired output frequency at said referenced temperature; and

e. Varying selectively said area of said electrically conductive material in said at least one resonator until said output frequency of said stabilized oscillator is within 1-5 ppm of said desired output frequency at said reference temperature.

12. The method as recited in claim 11 wherein said step of selectively varying said area of said electrically conductive material further comprises burning said material away with a laser.

13. A dielectric resonator for use in combination with a frequency-stabilized oscillator of the type which includes an RF oscillator circuit having at least one gallium arsenide field effect transistor as an active element, said dielectric resonator being tuned to a frequency within the resonant frequency region of said oscillator circuit, and a slab-type microstripline transmission line to interconnect said resonator to said oscillator;

said dielectric resonator having at least one electrically conductive area on its surface the selective variation in size of which alters the resonant frequency of said resonator;

said dielectric resonator further comprising;

a. an electrically conductive resonator housing having a resonating cavity therethrough;

b. a resonator body made of dielectric medium;

c. a resonator body mounting plate of thin, rigid dielectric material mounted at one end of said cavity in said housing to mount said resonator body within said cavity; and

d. a tuning plate of thin, rigid dielectric material fixedly-mounted to said housing at the other end of said cavity from said first-mentioned plate, coated with an electrically conductive material, whose areal extent over the plate may be selectively varied, whereby the resonant frequency of said dielectric resonator may be finely tuned.

14. The device as recited in claim 13 wherein said electrically conductive material is a metal.

15. The device as recited in claim 14 wherein said metal is selected from the group consisting of gold, silver, platinum, copper, tin, lead, nickel, chromium, cadmium, chrome-nickel alloy, tin-lead alloy or chrome-gold alloy.

16. The device as recited in claim 13 wherein said cavity has an aperture therein through which electromagnetic energy may be coupled into said cavity, and at least one other aperture the area of which may be selectively varied while said resonator is in place within said circuit to vary the resonant frequency of said cavity and said circuit.

17. The device as recited in claim 13 wherein said dielectric resonator body is selected from the group consisting of air, fused silica, fused quartz, silicon dioxide, aluminum dioxide, titanium dioxide, barium tetratitanate, or zirconium-tin titanate.