Power transistor module

• US 4,639,759 A
• Filed: 11/10/1983
• Issued: 01/27/1987
• Est. Priority Date: 11/10/1982
• Status: Expired due to Fees

• Current Assignee: Brown Boveri & CIE AG Mannheim-Kafertal Germany
• Original Assignee: Brown Boveri & CIE AG (ABB Limited)
• Inventors: Bergmann, Lutz, Neidig, Arno, Leukel, Bernd
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): Gonzalez, Frank
• Application Number:
  US06/550,910
• Time in Patent Office: 1,174 Days
• Field of Search: 357/72, 357/74, 357/75, 357/80, 174/52 FP, 174/16 HS, 361/386-389
• US Class Current: 257/701
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A power transistor module includes a housing having a frame forming a housing wall and a ceramic plate fastened to the frame forming a housing bottom, structured metallizations disposed on the ceramic plate forming conductor runs and terminal pads, components including at least one power transistor and a bypass diode connected to the terminal pads, wiring elements being connected to the components and being freely accessible from the top of the housing, the wiring elements including an auxiliary collector terminal, and an auxiliary diode connected between the auxiliary collector terminal and the collector electrode of the power transistor.

Claims

1. Power transistor module, comprising a housing having a frame forming a housing wall and a ceramic plate fastened to said frame forming a housing bottom;

structured metallizations disposed on said ceramic plate forming conductor runs and terminal pads;

components including at least one power transistor having a collector electrode and a bypass diode connected to said terminal pads;

wiring elements being connected to said components and being freely accessible from the top of said housing, said wiring elements including an auxiliary collector terminal; and

an auxiliary diode connected between said auxiliary collector terminal and the collector electrode of said power transistor.

2. Power transistor module according to claim 1, wherein said frame is formed of plastic.

3. Power transistor module according to claim 1, wherein said wiring elements include base and auxiliary emitter terminals.

4. Power transistor module according to claim 3, wherein said housing has opposite sides, said auxiliary collector terminal, base terminal and auxiliary emitter terminal are disposed at one of said sides outside the top of said housing, and said wiring elements include a common terminal connected to said power transistor and bypass diode disposed at the other of said sides outside the top of said housing.