Method of making a piezoelectric shear wave resonator

• US 4,640,756 A
• Filed: 05/20/1985
• Issued: 02/03/1987
• Est. Priority Date: 10/25/1983
• Status: Expired due to Term

• Current Assignee: Iowa State University Research Foundation Incorporated (Iowa State University)
• Original Assignee: United States Department of Energy
• Inventors: Wang, Jin S., Landin, Allen R., Lakin, Kenneth M.
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Leader, William T.
• Application Number:
  US06/736,164
• Time in Patent Office: 624 Days
• Field of Search: 204/192 C, 204/192 SP, 204/192 PE, 204/192 R
• US Class Current: 204/192.18
• CPC Class Codes: C23C 14/225 Oblique incidence of vaporised material on substrate
• CPC Class Codes: C23C 14/3435 Applying energy to the substrate during sputtering
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H03H 3/02 for the manufacture of piezoelectric or electrostrictive resonators or networks H03H3/08 takes precedence
• CPC Class Codes: H10N 30/076 by vapour phase deposition

Abstract

An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/°C.

Claims

1. A method of depositing a film of piezoelectric material on a substrate, the film having a uniform, controlled, inclined C-axis orientation comprising:

providing a dc planar reactive sputtering system having a chamber containing a cathode for holding a target, an anode spaced from and parallel to the cathode for holding the substrate and a reactive gas,

establishing an electrical field between the cathode and the anode to sputter the target such that the target material ionizes to form an ion flux which reacts with the reactive gas forming the piezoelectric material which deposits on the substrate,

providing a positively biased control electrode in the chamber near the substrate and establishing a second, dc electrical field between the control electrode and the anode to collect the electron current and control the ion flux, the electrode position and the strength of the dc field being sufficient to alter the direction of the ion flux as it strikes the substrate to control the orientation of the C-axis away from the direction of the control electrode, the distance of the electrode above the plane of the substrate and the strength of the second electrical field controlling the degree of inclination of the C-axis, thereby forming a film of piezoelectric material having a uniform, controlled, inclined C-axis.

2. The method of claim 1 wherein the control electrode is positioned above the plane of the substrate and laterally from directly above the substrate.

3. The method of claim 2 wherein the voltage of the control electrode relative to the substrate is from 30 to 50 volts dc.

4. The method of claim 3 wherein the target is selected from the group consisting of zinc and aluminum.

5. The method of claim 4 wherein the reactive gas is selected from the group consisting of oxygen and nitrogen.

6. The method of claim 5 wherein the target is zinc, the reactive gas is oxygen and the substrate is heated to about 300°

C.

7. The method of claim 5 wherein the target is aluminum, the reactive gas in nitrogen and the substrate is heated to about 100°

C.

8. A method of forming a piezoelectric shear wave resonator comprising:

providing a dc planar sputtering system having a chamber containing a cathode for holding a target, an anode spaced from and parallel to the cathode for holding a substrate and a reactive gas,

establishing an electrical field between the cathode and the anode to sputter the target such that the target material ionizes to form an ion flux which reacts with the reactive gas forming the piezoelectric material which deposits on the substrate,

providing a positively biased control electrode in the chamber near the substrate and establishing a second, dc electrical field between the control electrode and the anode to collect the electron current and control the ion flux, the electrode position and the strength of the dc field being sufficient to alter the direction of the ion flux as it strikes the substrate to control the orientation of the C-axis away from the direction of the control electrode, the distance of the electrode above the plane of the substrate and the strength of the second electrical field controlling the degree of inclination of the C-axis,

removing the substrate under a portion of the deposited film to form a cavity such that the film forms a plate spanning the cavity, and

depositing a layer of electrically conductive material on each side of the film to form upper and lower electrodes for applying a current to the film to excite the film, thereby forming the shear wave resonator.

9. The method of claim 8 including the additional step of first providing a deposition layer on the substrate, the piezoelectric material being deposited on the deposition layer, the substrate being removed under the deposition layer to form a cavity while the deposition layer remains essentially intact forming a composite of the film and deposition layer spanning the cavity, the lower electrode being deposited on the deposition layer.

10. The method of claim 9 including the step or removing a portion of the desposition layer adjacent the cavity to provide a plate of the film spanning the cavity, the lower electrode then being deposited on the film.

11. The method of claim 9 wherein the substrate is silicon and the deposition layer is p⁺ silicon, and wherein the piezoelectric film is deposited such that the thickness of the deposition layer and the thickness of the piezoelectric film are in a predetermined ratio so that the temperature coefficients of resonance of the piezoelectric film and the deposition layer compensate one another, whereby the resonator has a temperature coefficient of resonance of about 0 ppm/C.

12. The method of claim 11 wherein the piezoelectric material is ZnO and the ratio is between 8:

1 and about 10;

1.

13. The method of claim 11 wherein the piezoelectric material is AlN and the ratio is between 1.5:

1 and 3.5;

1.