Piezoelectric resonating device

• US 4,642,508 A
• Filed: 03/08/1985
• Issued: 02/10/1987
• Est. Priority Date: 03/09/1984
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sato, Hiroaki, Suzuki, Hitoshi
• Primary Examiner(s): BUDD, MARK OSBORNE
• Application Number:
  US06/709,600
• Time in Patent Office: 704 Days
• Field of Search: 310/321, 310/324
• US Class Current: 310/321
• CPC Class Codes: H03H 3/04 for obtaining desired frequency or temperature coefficient
• CPC Class Codes: H03H 9/02102 of temperature influence cutting angles H03H9/02015
• CPC Class Codes: H03H 9/02133 of stress
• CPC Class Codes: H03H 9/173 Air-gaps
• CPC Class Codes: H03H 9/564 implemented with thin-film techniques
• CPC Class Codes: H10N 30/076 by vapour phase deposition
• CPC Class Codes: H10N 30/081 by coating or depositing using masks, e.g. lift-off
• CPC Class Codes: H10N 30/082 by etching, e.g. lithography

Abstract

The present invention provides a piezoelectric thin-film resonator comprising a non-piezoelectric film layer formed on a substrate, a lower electrode, a piezoelectric film layer and an upper electrode. An air-gap layer is formed between the non-piezoelectric film and the substrate to facilitate vibration of the piezoelectric film layer at the resonate frequency. The resulting resonating device is mechanically strong while at the same time being capable of operating at high frequency.

Claims

1. A piezoelectric resonating device comprising:

a substrate having a substantially flat surface;

a non-piezoelectric film layer formed on said flat surface to create an air-gap between a portion of said non-piezoelectric film layer and said flat surface;

a first electrode formed on said non-piezoelectric film and extending along said air-gap;

a piezoelectric film layer formed on said non-piezoelectric film layer and said first electrode; and

a second electrode formed on said piezoelectric film layer and extending along said air-gap.

2. A piezoelectric resonating device according to claim 1 wherein said air-gap is formed by the following steps:

forming a dummy film layer on said flat surface;

forming said non-piezoelectric film layer on said flat surface and said dummy film layer; and

removing said dummy film layer by soaking said flat surface in a solution which dissolves said dummy film layer.

3. A piezoelectric resonating device according to claim 1 wherein said non-piezoelectric film layer comprises SiO₂ film.

4. A piezoelectric resonating device according to claim 1 wherein said non-piezoelectric film layer comprises Si₃ N₄ film.

5. A piezoelectric resonating device according to claim 1 wherein said non-piezoelectric film layer comprises Si₃ N₄ film formed on said flat surface and a SiO₂ film formed on said Si₃ N₄ film.

6. A piezoelectric resonating device according to claim 1 wherein said first electrode has a L-shaped pattern.

7. A piezoelectroc resonating device according to claim 1 wherein said second electrode has an L-shaped pattern.

8. A piezoelectric resonating device according to claim 6 wherein said second electrode includes a pair of independent electrodes.

9. A piezoelectric resonating device according to claim 1 wherein said piezoelectric film comprises a ZnO film.

10. A piezoelectric resonating device comprising:

a substrate having a substantially flat surface;

a non-piezoelectric film layer formed on said flat surface to create an air-gap between said non-piezoelectric film layer and said flat surface;

a lower electrode formed on said non-piezoelectric film layer;

a piezoelectric film layer formed on said non-piezoelectric film layer and said lower electrode;

an upper electrode formed on said piezoelectric film layer so as to interface with said lower electrode; and

a dielectric film layer formed on said piezoelectric film and said upper electrode.

11. A piezoelectric resonating device according to claim 10 wherein said air-gap is formed by the following steps:

forming a dummy film layer of said flat surface corresponding to said air-gap;

forming said non-piezoelectric film layer, said lower electrode, said piezoelectric film layer, said upper electrode and said dielectric film successively; and

soaking said flat surface in a solution which dissolves said dummy film layer so as to form said air-gap.

12. A piezoelectric resonating device according to claim 10 wherein said dielectric film layer is comprised of a SiO₂ film.

13. A piezoelectric resonating device according to claim 12 wherein said piezoelectric film layer is comprised of a ZnO film.

14. A piezoelectric resonating device according to claim 13 wherein said non-piezoelectric film layer is comprised of an SiO₂ film.

15. A piezoelectric resonating device according to claim 13 wherein said non-piezoelectric film layer is comprised of:

a Si₃ N₄ film formed on said substrate; and

a SiO₂ film formed on said Si₃ N₄ film.

17. A piezoelectric resonating device according to claim 15 wherein the device further comprises a dielectric film layer formed on said piezoelectric film layer and said upper electrode.

16. A piezoelectric resonating device comprising:

a substrate having a substantially flat surface;

a metal film layer formed on said flat surface to create an air-gap between said flat surface and said metal film;

a piezoelectric film formed on said metal film; and

an upper electrode formed on said piezoelectric film layer.