Semiconductor device

• US 4,643,950 A
• Filed: 03/06/1986
• Issued: 02/17/1987
• Est. Priority Date: 05/09/1985
• Status: Expired due to Fees

• Current Assignee: Agency for Industrial Science and Technology
• Original Assignee: Agency for Industrial Science and Technology
• Inventors: Egami, Koji, Ogura, Atsushi
• Primary Examiner(s): VAN BALEN, WILLIAM
• Application Number:
  US06/837,005
• Time in Patent Office: 348 Days
• Field of Search: 428/446, 428/448, 428/698, 428/699
• US Class Current: 428/446
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02689 using particle beams
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 21/318 composed of nitrides

Abstract

In a laminated semiconductor device comprising a substrate, an insulating layer formed on the substrate and at least one active layer formed on the insulating layer, the insulating layer contains an AlN layer as an interlayer insulating film.

Claims

1. A semiconductor device comprising:

a substrate, an insulating layer formed on said substrate, said insulating layer containing an AlN layer as an interlaid insulating film, and at lease one active layer formed on said insulating layer.

2. The semiconductor device according to claim 1 wherein said substrate is made of a material selected from the group consisting of silicon, sapphire, ceramic and glass.

3. The semiconductor device according to claim 1 said insulating layer further contains a barrier layer for preventing diffusion of aluminium atoms in said AlN layer into adjacent layer.

4. The semiconductor device according to claim 3 wherein said barrier layer is made of silicon nitride (Si₃ N₄).

5. A semiconductor device according to claim 3 wherein said insulating layer comprises one barrie layer formed on said substrate, the AlN layer, the other barrier layer, and a silicon oxide layer which are laminated in the order mentioned.