Method of measuring film thickness

• US 4,645,349 A
• Filed: 05/10/1985
• Issued: 02/24/1987
• Est. Priority Date: 09/21/1984
• Status: Expired due to Fees

• Current Assignee: ORC Manufacturing Co., Ltd.
• Original Assignee: ORC Manufacturing Co., Ltd.
• Inventors: Tabata, Hidetoshi
• Primary Examiner(s): Rosenberger, R. A.
• Assistant Examiner(s): Cooper, Crystal D.
• Application Number:
  US06/732,709
• Time in Patent Office: 655 Days
• Field of Search: 356/382, 356/355
• US Class Current: 356/632
• CPC Class Codes: G01B 11/0675 using interferometry

Abstract

An improved method of measuring film thickness of the film layer on a certain material is disclosed. The method is carried out by way of the steps of measuring reflection intensity spectrum, determining extreme values of wavelength relative to the spectrum, preparing an expected value table relative to the reflection interference orders associated with the extreme values of wavelength, calculating a group of expected values of film thickness with reference to the expected value table, calculating deviated values among the values of film thickness in association with the group of expected values, determining the expected orders which minimize absolute values corresponding to deviated values as true interference orders and determining a required film thickness with reference to the thus determined interference orders. To display wavelength scanned by a monochromator and intensity of reflected light beam transmitted from the material to be measured, an oscilloscope or a CRT is used in operative association with the monochromator. The monochromator is equipped with a diffraction grating which serves to generate marker signals having a predetermined step wavelength.

Claims

1. A method of measuring film thickness of the film layer on a certain material of which film thickness is to be measured by utilizing reflection interference, comprising the steps of:

measuring a reflection intensity spectrum,

determining extreme values of wavelength for said reflection intensity spectrum,

preparing an expected value table of the reflection interference orders associated with said extreme values of wavelength,

calculating a group of expected values of film thickness with reference to said expected value table,

calculating deviated values among the values of film thickness in association with the group of expected values,

determining the expected orders which minimize absolute values corresponding to said deviated values so as to determine true interference orders; and

determining a required film thickness with reference to the thus determined interference orders.

2. A method as defined in claim 1, wherein said method is carried out by operating an apparatus which comprises a light source adapted to emit a light beam toward material of which film thickness is to be measured, a monochromator, a semi-transparent mirror through which a light beam transmitted from said light source passes freely, a reflection mirror, an observation mirror, an objective lens, a photomultiplier tube adapted to receive a reflected light beam via said objective lens, said observation mirror, said reflection mirror and said semi-transparent mirror so as to generate photoelectric current, an amplifier and an oscilloscope or a CRT.

3. A method as defined in claim 2, wherein the monochromator is equipped with a diffraction grating which serves to generate marker signals having a predetermined step wavelength whereby wavlength of monochromatic light can be scanned.

4. A method as defined in claim 2, wherein the oscilloscope or CRT is operatively coupled to said monochromator so that it displays wavelengths scanned by said monochromator and the intensity of the reflected light beam transmitted from the material being measured.