Method of producing MOS FET type semiconductor device

• US 4,646,426 A
• Filed: 04/08/1985
• Issued: 03/03/1987
• Est. Priority Date: 02/16/1981
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Sasaki, Nobuo
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/722,741
• Time in Patent Office: 694 Days
• Field of Search: 29/571, 29/578, 29/576 B, 29/589, 148/1.5, 148/DIG. 141, 148/DIG. 91, 148/DIG. 90, 148/DIG. 92, 148/DIG. 93, 357/23.6, 357/23.9, 357/23 R, 357/91
• US Class Current: 438/250
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 29/495 the conductor material next to the insulator being a simple metal, e.g. W, Mo H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H10B 12/30 DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
• CPC Class Codes: Y10S 148/09 Laser anneal
• CPC Class Codes: Y10S 148/091 Laser beam processing of fets
• CPC Class Codes: Y10S 148/141 Self-alignment coat gate

Abstract

In the production of an MOS transistor or a one-MOS transistor one-capacitor memory cell, a gate electrode is made of aluminum, doped regions are formed by an ion-implantation method using the gate electrode as a mask, and the doped regions are annealed by a laser beam.

Claims

1. A method of producing a semiconductor memory device including one metal oxide semiconductor transistor and one capacitor formed on a semiconductor substrate, comprising the steps of:

(a) forming a gate insulating layer on the semiconductor substrate;

(b) forming an aluminum gate electrode on the gate insulating layer;

(c) introducing impurities into the semiconductor substrate to form doped regions by ion-implanting the impurities using the aluminum gate as a mask;

(d) annealing the doped regions by heating the semiconductor substrate to a temperature of from 200°

C. to 300°

C. and irradiating the semiconductor substrate with a laser beam having a wavelength of 0.9 μ

m or more;

(e) oxidizing the aluminum gate electrode to form an aluminum oxide layer thereon;

(f) forming an aluminum capacitor plate on the gate insulating layer and the aluminum oxide layer;

(g) forming an intermediate insulating layer on the entire surface of said device;

(h) opening windows through the gate insulating layer and the intermediate insulating layer to form contact holes; and

(i) forming a patterned layer of aluminum on the intermediate insulating layer.

2. A method according to claim 1, wherein said step (d) comprises irradiating a laser beam having an energy density of substantially 2 J/cm².

3. A method of producing a semiconductor memory device, including one metal oxide semiconductor transistor and one capacitor formed on a semiconductor substrate, comprising the steps of:

(a) forming a gate insulating layer on the semiconductor substrate;

(b) forming an aluminum capacitor plate on the gate insulating layer;

(c) oxidizing the capacitor plate to form an aluminum oxide layer thereon;

(d) forming an aluminum gate electrode on the gate insulating layer and on the aluminum oxide layer;

(e) introducing impurities into the semiconductor substrate to form a doped region by ion-implantation using the aluminum gate electrode as a mask;

(f) annealing the doped region by heating the semiconductor substrate to a temperature of from 200°

C. to 300°

C. and irradiating the semiconductor substrate with a laser beam having a wavelength of 0.9 μ

m or more;

(g) forming an intermediate insulating layer on the entire surface of said device;

(h) opening windows through both the gate insulating layer and the intermediate insulating layer to form contact holes; and

(i) forming a patterned layer of aluminum on the intermediate insulating layer.

4. A method according to claim 3, wherein said step (f) comprises irradiating a laser beam having an energy density of substantially 2 J/cm².