Method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a treatment in a reaction gas

• US 4,647,338 A
• Filed: 07/29/1985
• Issued: 03/03/1987
• Est. Priority Date: 08/30/1984
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Visser, Jan
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/759,996
• Time in Patent Office: 582 Days
• Field of Search: 156/643, 156/646, 156/656, 156/659.1, 156/665, 156/345, 204/164, 204/192 E, 204/192 EC, 204/192 C, 204/298, 427/38, 427/39, 118/728, 118/50.1, 118/620
• US Class Current: 438/710
• CPC Class Codes: B01D 8/00 Cold traps; Cold baffles pumps for evacuating by condensing or freezing F04B37/08
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: Y10S 438/935 Gas flow control

Abstract

A method of manufacturing a semiconductor device, in which a semiconductor substrate (1) is subjected to a surface treatment in a reactor vessel (2), through which a current (3) of a reaction gas is passed and is then pumped away by means of a mechanical pump (14) and a cooling trap (15) arranged between this pump (14) and the reactor vessel (2). The current of reaction gas (3) consists of a current (Q_c) of gas condensable in the cooling trap (15) and a current (Q_i) of an inert gas. According to the invention, a separate current (Q_x) of an inert gas is conducted to the mechanical pump (14). This current (Q_x) is practically equally as large as the current of condensable gas (Q_c). Thus, a method is obtained, in which the partial pressure of the inert gas (P_i) and that of the condensable gas (P_c) in the reactor gas can be controlled to the optimum and separately.

Claims

1. A method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a surface treatment in a reactor vessel, through which a current of a reaction gas is passed and is then pumped away by means of a mechanical pump and a cooling trap arranged between this pump and the reactor vessel, the current of reaction gas consisting of a current of gas condensable in the cooling trap and a current of inert gas not condensable in the cooling trap, characterized in that there is conducted to the mechanical pump a separate current of an inert gas which is substantially equally as large as the current of gas condensable in the cooling trap.

2. A method as claimed in claim 1, characterized in that the cooling trap is cooled by means of liquid nitrogen.

3. A method as claimed in claim 1 or 2, characterized in that the inert gas conducted to the mechanical pump consists of helium, argon or nitrogen or a mixture thereof.

4. A method as claimed in claims 1 or 2, characterized in that the surface treatment is an etching treatment and in that as condensable gas a mixture of CCl₄ or BCl₃ and Cl₂ and as inert gas helium or argon is introduced into the reactor vessel.

5. A method as claimed in claim 4, characterized in that the overall pressure in the reactor vessel is 0.1 to 10 Torr.

6. A method as claimed in claim 3, characterized in that the surface treatment is an etching treatment and in that as condensable gas a mixture of CCl₄ or BCl₃ and Cl₂ and as inert gas helium or argon is introduced into the reactor vessel.

7. A method as claimed in claim 6, characterized in that the overall pressure in the reactor vessel is 0.1 to 10 Torr.