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Method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a treatment in a reaction gas

  • US 4,647,338 A
  • Filed: 07/29/1985
  • Issued: 03/03/1987
  • Est. Priority Date: 08/30/1984
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a surface treatment in a reactor vessel, through which a current of a reaction gas is passed and is then pumped away by means of a mechanical pump and a cooling trap arranged between this pump and the reactor vessel, the current of reaction gas consisting of a current of gas condensable in the cooling trap and a current of inert gas not condensable in the cooling trap, characterized in that there is conducted to the mechanical pump a separate current of an inert gas which is substantially equally as large as the current of gas condensable in the cooling trap.

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