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Method of fabricating silicon-on-insulator transistors with a shared element

  • US 4,649,627 A
  • Filed: 06/28/1984
  • Issued: 03/17/1987
  • Est. Priority Date: 06/28/1984
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a semiconductor structure, comprising the steps of:

  • depositing an epitaxial semiconductor layer on a first side of a first semiconductor substrate;

    forming a silicon oxide layer of predetermined thickness on said epitaxial layer;

    bonding said first side of said substrate to a second semiconductor substrate using said silicon oxide layer as a bonding material, thereby forming a bonded structure;

    removing said first substrate from said bonded structure to expose a major surface of said epitaxial layer;

    removing said epitaxial layer in selected areas to form active device regions of said epitaxial layer;

    forming a field oxide on areas of said epitaxial layer other than said active device regions;

    forming a gate oxide on areas of said epitaxial layer over said active device regions;

    forming a conductive gate electrode over a predetermined portion of said gate oxide;

    defining and forming SOI source and drain regions in said epitaxial layer on either side of said gate electrode, said SOI regions having a conductivity type the opposite of said epitaxial layer; and

    defining and forming bulk source and drain regions in portions of said second substrate on either side of at least one of said SOI source and drain regions, said bulk regions having a conductivity type opposite the conductivity type of said second substrate.

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