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Forming memory transistors with varying gate oxide thicknesses

  • US 4,651,406 A
  • Filed: 06/04/1986
  • Issued: 03/24/1987
  • Est. Priority Date: 02/27/1980
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor integrated circuit device comprising first type MIS transistors capable of operating at high voltage and second type MIS transistors, capable of operating at low voltage, comprising the steps of:

  • (a) preparing a semiconductor substrate having a first conductivity type region, said first conductivity type region having a major surface;

    (b) forming an insulating region dividing said major surface into first and second areas on which to form said first type MIS transistors and said second type MIS transistors, respectively;

    (c) introducing an impurity of the same conductivity type as the conductivity type of said first conductivity type region into said second area through an insulating film formed over the second area without introducing said impurity into said first area;

    (d) introducing an impurity of the same conductivity type as the conductivity type of said first conductivity type region into said first and second areas simultaneously through an insulating film, serving as a gate insulating film, formed over the first and second areas so as to have a thin thickness portion over said second area and a thick thickness portion over said first area;

    (e) forming a plurality of gate electrodes on said insulating film serving as the gate insulating film so as to exist over each of said first and second areas; and

    (f) forming source and drain regions associated with each of said plurality of gate electrodes in said first and second areas by introducing an impurity of the opposite conductivity type to the conductivity type of said first conductivity type region into said first and second areas, said plurality of source and drain regions forming said first type MIS transistors and said second type MIS transistors with said plurality of gate electrodes in said first and second areas, respectively.

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