Semiconductor devices

• US 4,657,658 A
• Filed: 11/07/1985
• Issued: 04/14/1987
• Est. Priority Date: 11/07/1984
• Status: Expired due to Fees

• Current Assignee: National Research Development Corporation
• Original Assignee: National Research Development Corporation
• Inventors: Sibbald, Alastair
• Primary Examiner(s): Kaplan, G. L.
• Application Number:
  US06/795,835
• Time in Patent Office: 523 Days
• Field of Search: 357/25, 307/310, 307/491, 328/1, 204/406, 204/408, 204/412, 204/416, 204/418, 324/71.6, 435/817
• US Class Current: 204/406
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82
• CPC Class Codes: H03F 1/301 in MOSFET amplifiers H03F1/303, H03F1/305, H03F1/308 take precedence
• CPC Class Codes: Y10S 435/817 Enzyme or microbe electrode

Abstract

A semiconductor integrated circuit for sensing a physico-chemical property of an ambient includes a pair of semiconductor devices (Q1, Q2) having a similar geometric and physical structure, one device (Q1) being sensitive to the property, the other being insensitive to the property, together with a differential amplifier (A1, A2, A3, A4, A5) having feedback connection to one of the pair of semiconductor devices.

Claims

1. A semiconductor integrated circuit including:

a first semiconductor device sensitive to a physico-chemical property of an ambient to which it is exposed and capable of producing an output signal dependent on said physico-chemical property,

a second semiconductor device insensitive to said physico-chemical property but having a geometry and physical structure substantially identical with that of said first semiconductor device and being substantially in isothermal contact with said first semiconductor device, and

differential amplifier means having an input coupled to outputs of said first and second semiconductor devices and having an output coupled to an input of one of said first and second semiconductors.

2. A semiconductor integrated circuit as claimed in claim 1 wherein said first and second semiconductor devices are field-effect transistors.

3. A semiconductor integrated circuit as claimed in claim 2 wherein said first semiconductor device includes a silicon substrate having channel region overlain by a layer of silcon nitride.

4. A semiconductor integrated circuit as claimed in claim 3 wherein said first semiconductor device includes a layer of silicon dioxide between said layer of silicon nitride and said substrate.

5. A semiconductor integrated circuit as claimed in claim 4 further including a layer of an ion-sensing polymeric film overlaying said layer of silicon nitride.

6. A semiconductor integrated circuit as claimed in claim 5 wherein said polymeric film incoporates an ionsphere dopant.

7. A semiconductor integrated circuit as claimed in claim 6 wherein said ionsphere-doped polymeric film includes valinomycin, bis(2-ethylexyl)adipate and polyvinyl chloride.

8. A semiconductor integrated circuit as claimed in any one of claims 1-7 having a protective overlay of polyimide.