Method and apparatus for automatically measuring semiconductor etching process parameters

• US 4,660,979 A
• Filed: 08/17/1984
• Issued: 04/28/1987
• Est. Priority Date: 08/17/1984
• Status: Expired due to Term

• Current Assignee: AT&T Teleholdings Incorporated (AT&T, Inc.)
• Original Assignee: AT&T Teleholdings Incorporated (AT&T, Inc.)
• Inventors: Muething, Kevin A.
• Primary Examiner(s): Willis, Davis L.
• Assistant Examiner(s): TURNER, SAMUEL A
• Application Number:
  US06/641,620
• Time in Patent Office: 984 Days
• Field of Search: 356/345, 356/355, 356/357, 356/358, 356/359, 356/363, 356/381, 356/382, 356/72, 156/626
• US Class Current: 356/504
• CPC Class Codes: G01B 11/0675 using interferometry

Abstract

An apparatus for automatically measuring the depth and rate of etching of a semiconductor body (10) comprises an interferometer (18) and a counter circuit (28). The interferometer (18) directs light towards the semiconductor body (10) and detects the intensity of the light reflected therefrom which varies periodically during etching. The counter circuit (28) is responsive to the periodically varying intensity of the reflected light and automatically determines the number of cycles and the frequency thereof to compute the etch depth and etch rate therefrom.

Claims

1. A method for automatically measuring the depth and rate of etching of an article, comprising the steps of:

(a) directing light towards the article, formed of a substrate having an overlying light transmissive layer, to cause a first beam of light to be reflected from the substrate and a second, conincident beam to be reflected from the light transmidsive layer, the coincident, reflected beams interfering because of a path length difference therebetween, causing the composite intensity of the beams to exhibit periodic maxima and minima as the path length difference changes during etching of said light transmissive layer;

(b) detecting the composite intensity of the beams during etching;

(c) generating a first electrical signal, which changes in state in response to a minima or maxima of the composite intensity, and generating a second electrical signal which is phase shifted from the first electrical signal by 90°

;

(d) processing said first and second electrical signals to obtain a count of the number of maxima or minima of the composite intensity;

(e) timing the period between successive changes in the count of minima or maxima and inverting the value of the period to establish the frequency of the maxima or minima; and

(f) computing the etch depth and the etch rate in accordance with the number of maxima or minima, and the frequency, respectively, of the composite intensity.

2. The method according to claim 1 wherein the step of generating said first electrical signal includes the substeps of:

(a) obtaining the derivative of the intensity of the reflected interfering beams; and

(b) producing an electrical signal which changes state in response to the zero crossings of the derivative of the intensity of the reflected intefering beam.

3. The method according to claim 2 wherein the step of generating said second electrical signal includes the substeps of:

(a) obtaining the integral of the derivative of the intensity of the reflected interfering beams; and

(b) producing an electrical signal which changes state in response to the zero crossings of the integral of the derivative of the intensity of the reflected interfering beams.

4. The method according to claim 1 wherein the step of processing said first and second electrical signals comprises the substeps of:

(a) counting the combined number of times each of the first and second electrical signals change in state;

(b) dividing the combined count of the number of changes in state of the first and second electrical signals by four to yield a count representative of the number of maxima or minima in the intensity of the reflected interfering beams.

5. The method according to claim 4 wherein the step of computing said etch depth and etch rate comprises:

scaling the frequency by the factor λ

/2n where λ

is the wavelength of the light directed towards the semiconductor body and n is the index of refraction of that portion of the light transmissive layer undergoing etching to provide an indication of the etch rate; and

scaling the count by the factor λ

/2n to yield an indication of the etch depth.

6. An appartatus for automatically measuring the depth and rate of etching of an article comprising:

means for directing a beam of light towards the article, formed of a substrate having a light transmissive layer, causing a first beam to be reflected from the light transmissive layer and a second coincident beam to be reflected from the substrate therebeneath, the beams interfering because of a path length difference therebetween, causing the composite intensity of the reflected interfering beams to exhibit periodic maxima and minima as the path length difference changes during etching of the light transmissive layer;

means for detecting the composite intensity of the reflected interfering beams during etching and for providing an output signal which varies accordingly;

means coupled to said detecting means and being responsive to the output signal thereof for generating first and second electrical signals, said first electrical signal changing in state in response to a minima or maxima of the composite intensity of the beams and said second electrical signal being phase shifted 90°

from said first electrical signal;

means for processing said first and second signal to obtain a count of the number of minima or maxima of the composite intensity;

means for timing the period between successive changes in the count of the minima or maxima and inverting the value thereof to establish the frequency of the minima or maxima; and

means for computing the depth and rate of etching of the article in accordance with the count of the number of minima or maxima and the frequency thereof, respectively.

7. The invention according to claim 6 wherein said means for directing a beam of light towards the semiconductor body comprises a helium-neon laser.

8. The invention according to claim 6 wherein said means for generating said first and second electrical signals comprises:

derivative circuit means coupled to said detecting means for providing an output signal which varies in accordance with the derivative of the output signal of said detecting means;

amplifier means coupled to said derivative circuit means for distributing the output signal thereof;

first zero crossing detector means coupled to said amplifier means for generating the first electrical signal in accordance with the zero crossings of the output signal of said derivative circuit means;

integrator means coupled to said amplifier means for providing an output signal varying in accordance with the integral of the output signal of said derivative circuit means; and

second zero crossing detector means coupled to said integrator means for generating the second electrical signal in accordance with zero crossings of the output signal of said integrator means.

9. The invention according to claim 6 wherein said processing means comprises:

first counter means for counting the number of changes in state of the first electrical signal;

second counter means for counting the number of changes in state of the second electrical signal;

summing means for summing the counts of said first and second counter means; and

divide by four gate means coupled to said summing means for dividing the summed count of said first and second counters by four to yield a cycle count representative of the number of whole cycles of the output signal of said detecting means that have passed thus far.

10. The invention according to claim 9 further including alarm circuit means for signaling when either a predetermined etch depth has been reached or when etching has been completed.

11. The invention according to claim 10 wherein said alarm circuit comprises:

a reference value generator for generating a count indicative of the number of quarter cycles of the output signal of the detecting means that pass before reaching a predetermined etch depth;

a comparator having a non-invert input coupled to the output of said reference value generator and having an invert input coupled to the output of said summing means, said comparator producing an output signal which changes in amplitude to a high logic level when the count at the invert input exceeds the count at the non-invert input;

a watchdog timer circuit coupled to the output of said first zero crossing detector means for generating an output signal which changes in amplitude to a high logic level when the output signal of said first zero crossing detector means fails to undergo a change in state within a predetermined time; and

a logic gate having first and second inputs coupled to the output of said comparator and the output of said watchdog timer circuit, respectively, said logic gate generating an alarm signal at its output when the signal at either of its first or second inputs changes in amplitude to a high logic level.

12. A method for automatically measuring the rate and depth of ething of an article comprising the steps of:

directing light towards the article, formed of a substrate having an overlying light transmissive layer, to cause a first beam of light to be reflected from the substrate and a second, coincident beam to be reflected from the light transmissive layer thereabove, the coincident reflected beams interfering because of a path length difference therebetween causing the composite intensity of the beams to exhibit periodic maxima and minima as the path length changes during etching of the light transmissive layer;

detecting the composite intensity of the reflected beams during etching;

obtaining the derivative of the composite intensity and generating a first electrical signal which changes state in response to the zero-crossing of the derivative of the composite intensity;

obtaining the integral of the derivative of the composite intensity and producing a second electrical signal which changes state in response to the zero-crossing of the integral of the derivative of the composite intensity;

processing the first and second signals to obtain a count of the number of minima or maxima of the composite intensity;

timing the period between successive changes in the count of the minima or maxima and inverting the value of the period to establish the frequency of the mizima or minima; and

computing the etch rate and depth in accordance with the number of minima or maxima and the frequency, respectively, of the composite intensity.

13. The method according to claim 12 wherein the step of processing said first and second electrical signals comprises the steps of:

counting the combined number of times each of said first and second signals change in state;

dividing the combined count of the number of changes in state of said first and second signals by four to yield a count representative of the number of minima or maxima in the composite intensity.

14. The method according to claim 12 wherein the step of computing the etch rate and depth comprises the steps of:

scaling the frequency by the factor λ

/2n where λ

is the wavelength of light directed towards the article and n is the index of refraction of the light transmissive layer undergoing etching to provide an indication of the etch rate; and

scaling the count by the factor λ

/2n to yield an indication of the etch depth.