Plasma etch movable substrate

• US 4,661,196 A
• Filed: 10/22/1984
• Issued: 04/28/1987
• Est. Priority Date: 10/22/1984
• Status: Expired due to Fees

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Gilbert, Joe W., Hockersmith, Dan T.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/663,909
• Time in Patent Office: 918 Days
• Field of Search: 204/164, 204/192 EC, 204/192 E, 204/298, 118/728, 118/729, 118/50.1, 118/620, 427/38, 427/39, 156/345, 156/643, 156/646, 156/656, 156/657, 156/659.1, 156/662, 156/665
• US Class Current: 156/345.31
• CPC Class Codes: H01J 37/32 Gas-filled discharge tubes heating by discharge H05B

Abstract

A substrate that is a portion of an electrode of a plasma reactor has two positions, a low position and a process position. They are achieved without generating particulate contaminate and are achieved additionally while the reaction chamber is maintained at its process pressure.

Stainless steel bellows assemblies have an inter volume that are capped at both ends from a chamber between the bellows. One end of the bellows assembly is mounted to the process chamber in a fixed position and a substrate to the other end is attached and is movable. A positioning is achieved by introducing compressed air in the chamber between the bellows and overcoming the process pressure in the outer chamber. A second position is achieved by releasing the compressed air between the chamber between the bellows and allowing the process pressure in the process chamber to collapse the bellows assembly.

Claims

1. An apparatus for the manufacturing of semiconductor devices from semiconductor wafers having a plurality of semiconductor circuit patterns on at least a reacting surface of the semiconductor wafer, the apparatus comprises:

reacting means for providing a stream of reacting gases to react with the semiconductor wafer to create circuit elements according to the semiconductor circuit pattern thereby;

handling means for handling the wafers and includes a chamber means for bringing the wafers into contact with the reacting gas, and the chamber means includes a plasma means for generating a plasma, and means for varying the volume of the chamber means;

degassing means for degassing of the semiconductor wafers, port means for preventing the contamination of the chamber means and to provide a port for the transfer of the semiconductor wafers from the degassing means to the chamber means;

exit means for isolating the semiconductor wafers and the circuit elements from the chamber means, second port means for providing a port for the transfer of the semiconductor wafer between the chamber means and the exit means, and transfer means for transferring the semiconductor wafer from the degassing means to the chamber means and from the chamber means to the exit means; and

ninth means for controlling the operation of the apparatus.

2. The apparatus according to claim 1 wherein the reacting means comprises:

gas means for providing a plurality of gases; and

ion means for ionizing predetermined members of the plurality of gases.

3. The apparatus according to claim 2 wherein the ion means comprises:

rf means for providing radio frequency energy;

plate means connected to the rf means; and

located in the chamber means for providing a

reacting plate for electrical field; and

second plate means connected to the

rf means located in the chamber means for providing a handling plate for the electrical field.

4. The apparatus according to claim 1 wherein the plasma means and the means for varying the volume means comprises:

generator means for generating radio frequency energy;

means for providing radio frequency energy means having a generally cylindrical shape and connected to the generator means for providing radio frequency energy to the chamber means;

support means for providing support for the semiconductor wafer, the support means being connected to the generator means and having a generally cylindrical shape.

5. The apparatus according to claim 4 wherein the

means for providing radio frequency energy means comprises:

connector means for connecting to the radio frequency energy source;

shield means connected to ground for surrounding the connector means with a ground shield; and

supply means for insulating the connector means from the shield means.

6. The apparatus according to claim 4 comprising:

supply means for providing a stream of gas to be ionized by the electric field between the means for providing radio frequency energy means and the support means; and

gap means connected to the support means for adjusting the separation between the support means and the means for providing radio frequency energy means.

7. The apparatus according to claim 6 wherein the reacting gases etch the semiconductor wafer and the means comprises:

detector means for detecting when the etching performed by the reacting gases has reached a predetermined depth in the semiconductor wafer.

8. The apparatus according to claim 7 the other comprising:

temperature controller means for controlling the temperature of the reacting gases and the semiconductor wafer.

9. The apparatus according to claim 6 wherein the means for varying the volume means comprises confining means for confining the plasma in a gap between the means for providing radio frequency energy means and support means;

application means for applying gas to be ionized to

10. The apparatus according to claim 9 wherein the confining means comprises:

gap adjustment means for varying the gap between the means for providing radio frequency energy means and the support means;

the gap adjustment means consists of a bellows connected to the support means having a reacting predetermined radius;

a handling bellows connected to the support means and surrounding the reacting bellows having a handling predetermined radius greater than the reacting predetermned radius;

a sealing means for sealing the difference between the radius of the reacting bellows and the handling bellows; and

a pressure source means for applying pressure between the reacting bellows and the handling bellows causing the support means to be raised or lowered depending on the pressure between the reacting bellows and the handling bellows, the reacting bellows and the handling bellows being contained in the chamber means.

11. The apparatus according to claim 1 wherein the degassing means and the port means each includes:

wafer storing means for storing of a plurality of semiconductor wafers.

12. The apparatus according to claim 1 wherein the chamber means and exit means further includes:

means for bringing the semiconductor wafers into contact with reactant gases.