Spatial light modulator and method

• US 4,662,746 A
• Filed: 10/30/1985
• Issued: 05/05/1987
• Est. Priority Date: 10/30/1985
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Hornbeck, Larry J.
• Primary Examiner(s): Corbin, John K.
• Assistant Examiner(s): Lemmo, Vincent J.
• Application Number:
  US06/792,947
• Time in Patent Office: 552 Days
• Field of Search: 350/632, 350/360, 350/487, 350/486, 350/6.6, 350/269
• US Class Current: 359/223.1
• CPC Class Codes: G02B 26/02 for controlling the intensity of light G02B26/004 takes precedence
• CPC Class Codes: G02B 26/08 for controlling the direction of light in light guides G02B6/35
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Abstract

An electrostatically deflectable beam spatial light modulator with the beam composed of two layers of aluminum alloy and the hinge connecting the beam to the remainder of the alloy formed in only one of the two layers; this provides a thick stiff beam and a thin compliant hinge. The alloy is on a spacer made of photoresist which in turn is on a semiconductor substrate. The substrate contains addressing circuitry in a preferred embodiment.

Claims

1. A spatial light modulator, comprising:

(a) a plurality of pixels formed in a layered structure;

(b) said layered structure including a substrate, s spacer layer on said substrate, a first reflecting layer on said spacer, a second reflecting layer on said first layer, and electrical addressing circuitry;

(c) for each of said pixels including

i. an electrostatically deflectable element formed in said reflecting layers and connected to the remainder of said reflecting layers by a hinge formed in said first layer alone, and

ii. a well formed in said spacer and located between said deflectable element and said substrate.

2. The modulator of claim 1, wherein:

(a) said spacer is planarizing spun on material.

3. The modulator of claim 1, wherein:

(a) said deflectable elements of said pixels are electrically interconnected; and

(b) said addressing circuitry includes for each pixel an electrode on said substrate at the bottom of said well.

4. The modulator of claim 3, wherein:

(a) said electrode is formed of an aluminum alloy.

5. The modulator of claim 1, wherein:

(a) said first and second reflecting layers are the same material.

6. The modulator of claim 5, wherein:

(a) said material is an alloy of aluminum.

7. The modulator of claim 1, wherein:

(a) said second reflecting layer is much thicker than said first layer.

8. The modulator of claim 1, wherein:

(a) said deflectable element contains at least one hole through which plasma etching to form said well may partially proceed.

9. A spatial light modulator, comprising:

(a) a plurality of pixels formed in a layered structure;

(b) said layered structure including a substrate, a spacer layer on said substrate, a first conducting reflecting layer on said spacer, a second conducting reflecting layer on said first layer, and electrical addressing circuitry;

(c) each of said pixels including

i. an electrostatically deflectable element formed in said reflecting layers and connected to the remainder of said reflecting layers by a hinge formed in said first layer alone, and

ii. a well formed in said spacer and located between said deflectable element and said substrate; and

(d) said addressing circuitry including for each of said pixels an electrode on and insulated from said substrate at the bottom of said well.

10. A spatial light modulator, comprising:

(a) a plurality of pixels formed in a layered structure;

(b) said layered structure including a substrate, a spacer layer on said substrate, a first reflecting layer on said spacer, a second reflecting layer on said first layer, and electrical addressing circuitry;

(c) each of said pixels including

i. an electrostatically deflectable element formed in said reflecting layers and connected to the remainder of said reflecting layers by two hinges formed in said first layer alone, and

ii. a well formed in said spacer and located between said deflectable element and said substrate; and

(d) said addressing circuitry includes an electrode at the bottom of said well but asymmetrically disposed with respect to the axis running through said two hinges.

11. The modulator of claim 10, wherein:

(a) said spacer is planarizing spun on material.

12. The modulator of claim 10, wherein:

(a) said reflecting layers are both alloys of aluminum.

13. The modulator of claim 11, wherein:

(a) said second reflecting layer is much thicker than said first reflecting layer.

14. A spatial light modulator, comprising:

(a) a plurality of pixels formed in a layered structure;

(b) said layered structure including a substrate, s spacer layer on said substrate, a thin conducting reflecting layer on said spacer, a thick conducting reflecting layer on said thin layer, and electrical addressing circuitry;

(c) each of said pixels including

i. an electrostatically deflectable element formed in said reflecting layers and connected to the remainder of said reflecting layers by a hinge formed in said thin layer alone, and

ii. a well formed in said spacer and located between said deflectable element and said substrate.

15. The modulator of claim 14, wherein:

(a) said well is of curvature characterized by plasma etch formation.

16. The modulator of claim 15, wherein:

(a) said reflecting layers are alloys of aluminum; and

(b) said spacer is a planarizing spun on material.

17. A method of fabricating a deflectable beam spatial light modulator, comprising the steps of:

(a) forming addressing circuitry on a semiconductor substrate;

(b) forming a planarizing spacer over said circuitry and substrate;

(c) depositing a thin layer of a reflecting material on said spacer;

(d) forming a plurality of etch stops on said thin layer, at least one etch stop for each of said deflectable beams;

(e) depositing a thick layer of said material over said etch stops and said thin layer;

(f) patterning said thick layer to define said deflectable beams and etching said thick and thin layers with said pattern, said etch stops preventing etching of said thin layer only and defining hinges for support of said deflectable beams; and

(g) etching at least the exposed portion of said etch stops and the portion of said spacer immediately between said deflectable beams and said addressing circuitry and substrate.

18. The method of claim 17, wherein:

(a) said material is an aluminum alloy, said spacer is baked photoresist, said etch stops are silicon dioxide, and said substrate is silicon.