Electronic proximity sensor

• US 4,663,542 A
• Filed: 07/30/1984
• Issued: 05/05/1987
• Est. Priority Date: 07/29/1983
• Status: Expired due to Fees

• Current Assignee: Gerd Marhofer, Robert Buck
• Original Assignee: Gerd Marhofer, Robert Buck
• Inventors: Buck, Robert, Marhofer, Gerd
• Primary Examiner(s): Miller, Stanley D.
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US06/635,816
• Time in Patent Office: 1,009 Days
• Field of Search: 307/308, 307/580, 328/5, 361/179, 361/180, 331/65, 340/555, 330/288
• US Class Current: 327/517
• CPC Class Codes: H03K 17/955 using a capacitive detector

Abstract

An electronic sensor of the contactless type has a free-running oscillator with internal positive feedback supplemented by an external negative feedback including a capacitive path whose impedance is normally high but is lowered in the presence of an object to be detected, thereby reducing the output signal of the oscillator from a normal amplitude above a predetermined level to a diminished amplitude below that level. The negative feedback is provided through an IGFET, e.g. of n-channel depletion type, with the aid of a capacitor bridging its source and gate electrodes to form with the external capacitance a voltage divider for the output signal of the oscillator.

Claims

1. An electronic proximity sensor for contactless detection of an approaching object, comprising:

a free-running oscillator including an amplifier element provided with internal positive feedback; and

a negative-feedback path connected between an input and an output of said amplifier element, said path including an external impedance reducible in magnitude under the influence of an object to be detected whereby the amplitude of an output signal generated by said oscillator is diminished by such approach below a normal minimum level,

wherein said external impedance is an inverted variable capacitance defined by a monitoring electrode and a reference electrode,

wherein said path further includes a sensing transistor with an input electrode and a control electrode bridged by a coupling capacitor forming with said variable capacitance a voltage divider for said output signal,

wherein said sensing transistor is an IGFET with a source electrode and a gate electrode constituting said input and control electrodes,

wherein with said amplifier element energized by a d-c current supply with a positive terminal and a grounded terminal, said IGFET is of n-channel depletion type having a drain electrode connected to said positive terminal, and

wherein said amplifier element is a junction transistor coupled with a tank circuit via a current mirror providing said internal positive feedback, said tank circuit lying between ground and a base of said junction transistor having an emitter-collector network in series with said d.c. current supply.

2. A proximity sensor as defined in claim 1 wherein said junction transistor has an emitter connected to a load and grounded through an emitter resistor.

3. A proximity sensor as defined in claim 2 wherein said emitter resistor is adjustable.

4. A proximity sensor as defined in claim 2 wherein said coupling capacitor is shunted by a gate resistor, said source electrode being in series with a source resistor forming a junction point with said gate resistor.

5. A proximity sensor as defined in claim 4 wherein said junction point is connected to said emitter.

6. A proximity sensor as defined in claim 4 wherein said junction point is connected to an ungrounded terminal of said tank circuit coupled to said base.