Removal of semiconductor wafers from dicing film

• US 4,664,739 A
• Filed: 12/19/1983
• Issued: 05/12/1987
• Est. Priority Date: 12/19/1983
• Status: Expired due to Fees

• Current Assignee: National Starch and Chemical Holding Corporation (Nouryon BV)
• Original Assignee: Stauffer Chemical Company (Nouryon BV)
• Inventors: Aurichio, Joseph A.
• Primary Examiner(s): Gallagher, John J.
• Application Number:
  US06/562,899
• Time in Patent Office: 1,240 Days
• Field of Search: 156/235, 156/277, 156/248, 156/302, 156/249, 156/315, 156/268, 156/344, 156/307.3, 156/264, 428/40, 428/206, 428/202, 428/349, 29/583, 252/511, 252/512, 427/208.2, 264/345, 83/28
• US Class Current: 156/701
• CPC Class Codes: B28D 5/0082 for supporting, holding, feeding, conveying or discharging work
• CPC Class Codes: H01L 21/302 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
• CPC Class Codes: H01L 21/67132 Apparatus for placing on an insulating substrate, e.g. tape
• CPC Class Codes: H01L 21/68 for positioning, orientation or alignment
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 23/544 Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 156/93 Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
• CPC Class Codes: Y10T 156/1075 of plural laminae from single stock and assembling to each other or to additional lamina
• CPC Class Codes: Y10T 156/11 Methods of delaminating, per se; i.e. , separating at bonding face
• CPC Class Codes: Y10T 156/19 Delaminating means

Abstract

Semiconductor chips, which have been diced, can be removed from the conductive adhesive/polymer support film holding them, without leaving residual adhesive on the film if the wafer/adhesive support film laminate is heated prior to the dicing step. The heating step increases the release characteristics between the adhesive and film.

Claims

1. A process for forming individual chips from a semiconductor wafer by dicing said wafers into the individual chips which comprises:

(a) attaching the wafer to a conductive adhesive which is bonded to a plastic support film which is substantially free of a release layer on the side to which the adhesive is bonded;

(b) heating the resulting article to improve the release characteristics between the conductive adhesive and the support film prior to the dicing of the wafer; and

(c) removing the chip with adhesive substantially bonded thereto and with substantially no adhesive remaining on the support film after the dicing step has been completed.

2. A process as claimed in claim 1 in which the support film is formed of a polyolefin polymer.

3. A process as claimed in claim 1 wherein the support film is polypropylene.

4. A process as claimed in claim 1 wherein the support film has a thickness of from about 25 microns to about 150 microns.

5. A process as claimed in claim 1 wherein the film is polyolefin of about 25-150 micron thickness.

6. A process as claimed in claim 1 wherein the film is polypropylene of about 25-150 micron thickness.

7. A process as claimed in claim 1 wherein the conductive adhesive has a thickness of from about 6 to about 40 microns.

8. A process as claimed in claim 1 wherein the conductive adhesive contains an effective amount for conductivity of a conductive metal in an adhesive matrix.

9. A process as claimed in claim 2 wherein the support film has a thickness of about 25-150 microns and the adhesive has a thickness of about 6-40 microns.

10. A process as claimed in claim 3 having a conductive adhesive of a thickness of from about 6 microns to about 40 microns and wherein the adhesive contains an effective amount for conductivity of a conductive metal in an adhesive matrix.

11. A process as claimed in claim 1 wherein the heating in step (b) is from about 45°

C. to about 70°

C. for about 0.25 minutes to about 3 minutes.

12. A process as claimed in claim 2 wherein the heating in step (b) is from about 45°

C. to about 70°

C. for about 0.25 minutes to about 3 minutes.

13. A process as claimed in claim 3 wherein the heating in step (b) is from about 45°

C. to about 70°

C. for about 0.25 minutes to about 3 minutes.