Strontium aluminosilicate glass substrates for flat panel display devices
First Claim
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1. In a flat panel display device containing a flat, transparent substrate for growing large crystal polysilicon semiconductor films thereon, the improvement wherein said substrate is a strontium aluminosilicate glass capable of being melted at temperatures no higher than 1800°
- C. and which exhibits an annealing point of at least 850°
C., a linear coefficient of thermal expansion over the temperature range of 25°
-300°
C. of about 30-40×
10-7 /°
C., a liquidus temperature not exceeding about 1400°
C., and a liquidus viscosity of at least 1×
105 poises, said glass being essentially free from alkali metal oxides and consisting essentially, expressed in terms of mole percent on the oxide basis, of about- 12% SrO9-12% Al2 O377-82% SiO2.
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Abstract
This invention is concerned with the fabrication of flat panel display devices wherein a film of large crystal polysilicon is grown on a substrate. More particularly, the present invention is drawn to such devices wherein the substrate is prepared from a strontium aluminosilicate glass consisting essentially, in mole percent, of about 9-12% SrO, 9-12% Al2 O3, and 77-82% SiO2.
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Citations
2 Claims
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1. In a flat panel display device containing a flat, transparent substrate for growing large crystal polysilicon semiconductor films thereon, the improvement wherein said substrate is a strontium aluminosilicate glass capable of being melted at temperatures no higher than 1800°
- C. and which exhibits an annealing point of at least 850°
C., a linear coefficient of thermal expansion over the temperature range of 25°
-300°
C. of about 30-40×
10-7 /°
C., a liquidus temperature not exceeding about 1400°
C., and a liquidus viscosity of at least 1×
105 poises, said glass being essentially free from alkali metal oxides and consisting essentially, expressed in terms of mole percent on the oxide basis, of about- 12% SrO 9-12% Al2 O3 77-82% SiO2. - View Dependent Claims (2)
- C. and which exhibits an annealing point of at least 850°
Specification