Back junction photovoltaic solar cell

• US 4,667,060 A
• Filed: 05/28/1985
• Issued: 05/19/1987
• Est. Priority Date: 05/28/1985
• Status: Expired due to Term

• Current Assignee: Spire Corporation
• Original Assignee: Spire Corporation
• Inventors: Spitzer, Mark B.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/737,711
• Time in Patent Office: 721 Days
• Field of Search: 136/255, 136/256, 357/30
• US Class Current: 136/255
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/022441 Electrode arrangements specially adapted for back-contact solar cells
• CPC Class Codes: H01L 31/03529 Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A solar cell of novel construction is disclosed featuring the formation of a p-n junction at its rear surface. This allows for a reduction in series resistance and optimization of the p-n junction. The solar cell has a metallic front contact and is lightly doped to reduce contact resistance at the interface between the front contact and the front surface of the cell. The solar cell preferably is formed of either n-type or p-type silicon, with the p-n junction preferably formed therein by ion implantation. Preferably, the solar cell is about 50 micrometers thick and, possesses a conversion efficiency of at least 15% over an input intensity range of from about one to about 1,000 suns. The solar cell is particularly useful for concentrator solar cells intended for operation at high intensity (in excess of 500 suns).

Claims

1. A solar cell comprising:

(a) a semiconductor wafer having a front surface and a back surface; and

(b) a p-n junction provided at said back surface thereof;

(c) said front surface provided with a metallic front contact and being lightly doped to reduce contact resistance at the interface between said metallic front contact and said semiconductor wafer;

(d) said p-n junction at said back surface being patterned;

(e) said solar cell having a conversion efficiency of at least 15% over an input intensity range from about one sun to about 1,000 suns.

2. The solar cell of claim 1 wherein said front surface is further provided with a layer of silicon dioxide to reduce the recombination velocity thereat.

3. The solar cell of claim 2 wherein said front surface is further provided with an antireflective coating and wherein said metallic front contact is formed of successively evaporated layers of titanium and palladium, with a layer of silver being electroplated thereon.

4. The solar cell of claim 1 wherein said light doping at said front surface is effected by phosphorus.

5. The solar cell of claim 1 wherein said p-n junction at said back surface is formed by ion implantation, wherein said ion implanted p-n junction comprises a plurality of ion-implanted pocket junctions, and wherein said ion implanted pocket junctions are formed by a pocket array pattern comprising a plurality of squares, each about ten micrometers square formed on 50 micrometers centers, achieving a reduction in junction area by a factor of 25.

6. The solar cell of claim 1 wherein said back surface is provided with a patterned back p-n junction in the shape of a grating structure comprising a plurality of lines, each from about two micrometers to about five micrometers wide and centered on 500 micrometers, achieving a reduction in junction area by a factor of 100.

7. The solar cell of claim 1 which is a concentrator silicon solar cell designed for operation at high intensity input levels exceeding 500 suns.